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BS61价格

参考价格：￥7.5500

型号：BS61 品牌：Hammond 备注：这里有BS61多少钱，2025年最近7天走势，今日出价，今日竞价，BS61批发/采购报价，BS61行情走势销售排行榜，BS61报价。

型号	功能描述	生产厂家企业	LOGO
BS61	Battery holder for one AA battery 文件：72.74 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS61	包装：散装描述：BATT CONNECT SNAP 9V 1 CELL WIRE 电池产品电池座，电池夹，电池触头	HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司	HAMMOND
BS616LV1623	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TC	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TC-55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TC-70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCG55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCG70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCP55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCP70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TI	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TI-55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TI-70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIG55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIG70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIP55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIP70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1010	Very Low Power/Voltage CMOS SRAM 64K X 16 bit 文件：216.4 Kbytes Page：10 Pages	BSI 连邦科技	BSI
BS616LV1010	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010_06	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010_08	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC	Very Low Power/Voltage CMOS SRAM 64K X 16 bit 文件：216.4 Kbytes Page：10 Pages	BSI 连邦科技	BSI
BS616LV1010AC55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit 文件：216.4 Kbytes Page：10 Pages	BSI 连邦科技	BSI
BS616LV1010AI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit	Brilliance 华晨汽车	Brilliance
BS616LV1010AI55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010DC55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010DC55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010DC70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI

BS61产品属性

类型
描述
型号
BS61
功能描述
电池座、电池扣和电池接头 1599 Battery Kit
RoHS
否
制造商
Eagle Plastic Devices
产品
Battery Snaps
电池组电池大小
9 V
电池数量
1
端接类型
Snaps
颜色
Black
材料
Polyvinyl Chloride(PVC)
安装风格
Snap-In

BS61供应商更多...

更新时间：2025-11-28 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	BS612	森霸	24+	插件	8215	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市凌旭科技有限公司	BS616LV1010EIG70	BSI	2016+	TSOP44	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	BS616LV8010EZP-55	BSI	23+	TSOP44	20000	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	BS616LV4010EC-70	BRILLIANCEBSI	24+	NA	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市能元时代电子有限公司	BS616LV8017EIP70	BSI	23+	TSOP44	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
谛辉(北京/上海/青岛 )电子科技有限公司	BS616LV4010BI-70	BSI	25+	DIP	18000	原厂直接发货进口原装	询价
深圳市金芯世纪电子有限公司	BS616LV8017EIP55	BSI	22+	TSOP44	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	BS612光电、光敏传感器	PIR	25+	DIP6	64581	百分百原装现货实单必成欢迎询价	询价
深圳市华睿芯科技有限公司	BS616LV2016ECP70	BSI	24+	TSOP44	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市正迈科技有限公司	BS616LV2013EC-70	BSI	23+	NA	386	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价

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BS61价格

BS61产品属性

BS61供应商更多...

BS61芯片相关品牌

BS61规格书下载地址

BS61参数引脚图相关

BS61数据表相关新闻

BS3DT GI/RO/11按钮

BSC010N04LSI百分百原装进口现货

BS3406ADJ-LF-Z

BS83B12-3

BS412

BS816A-1

DdatasheetPDF页码索引