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BS61价格

参考价格：￥7.5500

型号：BS61 品牌：Hammond 备注：这里有BS61多少钱，2025年最近7天走势，今日出价，今日竞价，BS61批发/采购报价，BS61行情走势销售排行榜，BS61报价。

型号	功能描述	生产厂家&企业	LOGO
BS61	Battery holder for one AA battery 文件：72.74 Kbytes Page：2 Pages	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
BS61	包装：散装描述：BATT CONNECT SNAP 9V 1 CELL WIRE 电池产品电池座，电池夹，电池触头	HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司	HAMMOND
BS616LV1623	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TC	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TC-55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TC-70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCG55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCG70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCP55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TCP70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TI	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TI-55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TI-70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIG55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIG70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIP55	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1623TIP70	Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable [BSI] DESCRIPTION The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage. FEATURES • Vcc operation voltage : 2.7	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BS616LV1010	Very Low Power/Voltage CMOS SRAM 64K X 16 bit 文件：216.4 Kbytes Page：10 Pages	BSI 连邦科技	BSI
BS616LV1010	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010_06	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010_08	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC	Very Low Power/Voltage CMOS SRAM 64K X 16 bit 文件：216.4 Kbytes Page：10 Pages	BSI 连邦科技	BSI
BS616LV1010AC55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AC70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACG75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010ACP75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI	Very Low Power/Voltage CMOS SRAM 64K X 16 bit 文件：216.4 Kbytes Page：10 Pages	BSI 连邦科技	BSI
BS616LV1010AI55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AI70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIG75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP55	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010AIP75	Very Low Power CMOS SRAM 64K X 16 bit 文件：246.46 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010DC55	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010DC55	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010DC70	Very Low Power CMOS SRAM 128K X 16 bit 文件：208.79 Kbytes Page：11 Pages	BSI 连邦科技	BSI
BS616LV1010DC70	Very Low Power CMOS SRAM 64K X 16 bit 文件：209.36 Kbytes Page：11 Pages	BSI 连邦科技	BSI

BS61产品属性

类型
描述
型号
BS61
功能描述
电池座、电池扣和电池接头 1599 Battery Kit
RoHS
否
制造商
Eagle Plastic Devices
产品
Battery Snaps
电池组电池大小
9 V
电池数量
1
端接类型
Snaps
颜色
Black
材料
Polyvinyl Chloride(PVC)
安装风格
Snap-In

BS61供应商更多...

更新时间：2025-8-8 13:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	BS616LV1010EC-70	BSI	2402+	TSOP44	8324	原装正品!实单价优!	询价
深圳市实中创科技有限公司	BS616LV1010EIG70	BSI	10+	TSOP2-44	1350	原装现货低价出售	询价
深圳市富诚威科技有限公司	BS616LV2010EC-70	BSI	24+	TSOP	3600	绝对原装!现货热卖!	询价
深圳兆威电子有限公司	BS616LV1611TIG55	BSI	22+	TSOP48	22317	原装正品现货	询价
深圳市益百分电子有限公司	BS616LV4010EI-70	BSI	03+	TSOP	2360	全新原装进口自己库存优势	询价
深圳市中远芯科技有限公司	BS616LV8017EIP70	BSI	08+	TSOP44	160	原装现货	询价
深圳市勤思达科技有限公司	BS612	森霸PIR	24+	DIP6	5000	全新原装正品,现货销售	询价
深圳市星佑电子有限公司	BS616LV2019TC-70	BSI	03/04+	TSSOP	144	全新原装100真实现货供应	询价
深圳市讯顺达科技有限公司	BS612	PIR	2021+	DIP6	24035	全新原装公司现货	询价
深圳市得捷芯城科技有限公司	BS612	N/A	24+	N/A	7218	原厂可订货,技术支持,直接渠道。可签保供合同	询价

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BS61规格书下载地址

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BS3DT GI/RO/11按钮
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焕盛达竭诚为广大客户提供一站式配套服务，解决您的BOM表采购之痛，让您采购无忧！
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BS3406ADJ-LF-Z，当天发货0755-82732291全新原装现货或门市自取.
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2020-2-17
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BS61价格

BS61产品属性

BS61供应商更多...

BS61芯片相关品牌

BS61规格书下载地址

BS61参数引脚图相关

BS61数据表相关新闻

BS3DT GI/RO/11按钮

BSC010N04LSI百分百原装进口现货

BS3406ADJ-LF-Z

BS83B12-3

BS412

BS816A-1

DdatasheetPDF页码索引