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BS1晶体管资料

BS1别名：BS1三极管、BS1晶体管、BS1晶体三极管
BS1生产厂家：
BS1制作材料：Si-P+Darl+Di
BS1性质：
BS1封装形式：贴片封装
BS1极限工作电压：45V
BS1最大电流允许值：1.5A
BS1最大工作频率：350MHZ
BS1引脚数：3
BS1最大耗散功率：1.5W
BS1放大倍数：β>2000
BS1图片代号：H-99
BS1vtest：45
BS1htest：350000000
BS1atest：1.5
BS1wtest：1.5

BS1代换 BS1用什么型号代替：BSP60,

BS1价格

参考价格：￥3.6618

型号：BS1 品牌：Neutrik 备注：这里有BS1多少钱，2024年最近7天走势，今日出价，今日竞价，BS1批发/采购报价，BS1行情走势销售排行榜，BS1报价。

型号	功能描述	生产厂家&企业
BS1001-7R	100 Watt DC-DC Converters Wideinputvoltagerangesfrom8...385VDC 1or2isolatedoutputsupto48VDC 4kVACI/Oelectricstrenghtestvoltage •Ruggedelectricalandmechanicaldesign •Fullyisolatedoutputs •Operatingambienttemperaturerange –40...71°Cwithconvectioncooling	POWER-ONE Power-One
BS107	TMOS Switching(N-Channel-Enhancement) TMOSSwitching N–Channel—Enhancement	MotorolaMotorola, Inc 摩托罗拉
BS107	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦
BS107	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V	SIEMENS Siemens Ltd
BS107	N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features •HighBreakdownVoltage •HighInputImpedance •FastSwitchingSpeed •SpeciallySuitedforTelephoneSubsets	DIODESDiodes Incorporated 达尔科技
BS107	Small Signal MOSFET 250 mAmps, 200 Volts SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107	N-Channel Enhancement-Mode MOS Transistors	TemicTEMIC 杰驰电子
BS107A	TMOS Switching(N-Channel-Enhancement) TMOSSwitching N–Channel—Enhancement	MotorolaMotorola, Inc 摩托罗拉
BS107A	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦
BS107A	Small Signal MOSFET 250 mAmps, 200 Volts SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107A	Small Signal MOSFET 250 mAmps, 200 Volts N.Channel TO.92 SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107ARL1	Small Signal MOSFET 250 mAmps, 200 Volts SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107ARL1G	Small Signal MOSFET 250 mAmps, 200 Volts N.Channel TO.92 SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107ARLRM	Small Signal MOSFET 250 mAmps, 200 Volts SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107ARLRP	Small Signal MOSFET 250 mAmps, 200 Volts SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES 200VoltVDS RDS(on)=23Ω	Zetex Zetex Semiconductors
BS107P	Qualified to AEC-Q101 Standards for High Reliability Features •BVDSS>200V •RDS(ON)≤23Ω@VGS=2.6V •ID=120mAMaximumContinuousDrainCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability	DIODESDiodes Incorporated 达尔科技
BS107PSTZ	Qualified to AEC-Q101 Standards for High Reliability Features •BVDSS>200V •RDS(ON)≤23Ω@VGS=2.6V •ID=120mAMaximumContinuousDrainCurrent •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability	DIODESDiodes Incorporated 达尔科技
BS107PT	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES 200VoltVDS RDS(on)=28Ω	Zetex Zetex Semiconductors
BS107RL1	Small Signal MOSFET 250 mAmps, 200 Volts SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS107RLRA	Small Signal MOSFET 250 mAmps, 200 Volts SmallSignalMOSFET250mAmps,200Volts N-ChannelTO-92 Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS108	200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL LogicLevelTMOS N–ChannelEnhancementMode ThisTMOSFETisdesignedforhighvoltage,highspeedswitchingapplicationssuchaslinedrivers,relaydrivers,CMOSlogic,microprocessororTTLtohighvoltageinterfaceandhighvoltagedisplaydrivers. •LowDriveRequirement,VGS=3	MotorolaMotorola, Inc 摩托罗拉
BS108	N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaTO-92envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speed	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦
BS108	DMOS Transistors (N-Channel) FEATURES ♦Highbreakdownvoltage ♦Highinputimpedance ♦Lowgatethresholdvoltage ♦Lowdrain-sourceONresistance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown ♦Speciallysui	GE GE Industrial Company
BS108	Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level SmallSignalMOSFET250mAmps,200Volts,LogicLevel N−ChannelTO−92 ThisMOSFETisdesignedforhighvoltage,highspeedswitchingapplicationssuchaslinedrivers,relaydrivers,CMOSlogic,microprocessororTTLtohighvoltageinterfaceandhighvoltagedisplaydrivers. Features •LowDr	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS108G	Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level SmallSignalMOSFET250mAmps,200Volts,LogicLevel N−ChannelTO−92 ThisMOSFETisdesignedforhighvoltage,highspeedswitchingapplicationssuchaslinedrivers,relaydrivers,CMOSlogic,microprocessororTTLtohighvoltageinterfaceandhighvoltagedisplaydrivers. Features •LowDr	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS108ZL1	Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level SmallSignalMOSFET250mAmps,200Volts,LogicLevel N−ChannelTO−92 ThisMOSFETisdesignedforhighvoltage,highspeedswitchingapplicationssuchaslinedrivers,relaydrivers,CMOSlogic,microprocessororTTLtohighvoltageinterfaceandhighvoltagedisplaydrivers. Features •LowDr	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS108ZL1G	Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level SmallSignalMOSFET250mAmps,200Volts,LogicLevel N−ChannelTO−92 ThisMOSFETisdesignedforhighvoltage,highspeedswitchingapplicationssuchaslinedrivers,relaydrivers,CMOSlogic,microprocessororTTLtohighvoltageinterfaceandhighvoltagedisplaydrivers. Features •LowDr	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS112	WIDE WAVELENGTH BAND TYPE PHOTODIODE BlueSensitivePhotodiodes	SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA）
BS115	CAN PACKAGE PHOTODIODE FOR VISIBLE LIGHT CanPackagePhotodiodeforVisibleLight Applications 1.LCDbacklightmonitor 2.Exposuremeter	SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA）
BS120	Photodiode for Visible Light ■Features 1.Spectralsensitivitycharacteristicsakinto 2.Compactflatpackage 4.Infraredlightcut-offtypethatofhumaneyeVR=1V) 3.Lowdarkcurrent(Id:MAX.10-11Aat ■Applications 1.AE(automaticexposure)systemandES 2.Stroboscopes 3.Preciseopticalinstruments(el	SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA）
BS123	DMOS Transistors (N-Channel) FEATURES ♦Highinputimpedance ♦Lowgatethresholdvoltage ♦Lowdrain-sourceONresistance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown	GE GE Industrial Company
BS1301-7R	100 Watt DC-DC Converters Wideinputvoltagerangesfrom8...385VDC 1or2isolatedoutputsupto48VDC 4kVACI/Oelectricstrenghtestvoltage •Ruggedelectricalandmechanicaldesign •Fullyisolatedoutputs •Operatingambienttemperaturerange –40...71°Cwithconvectioncooling	POWER-ONE Power-One
BS1362-10A	iMOTION™ Modular Application Design Kit Eval-M3-CM615PNisanevaluationboardformotordriveapplicationswithsinglephasePFCintegrated3phase IPM.CombinedinakitwithoneoftheavailableMADKcontrolboardoptions,itdemonstratesInfineon’smotion controlICandIPMtechnologyformotordriveswithsinglephasePFC. Main	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BS142	WIDE WAVELENGTH BAND TYPE PHOTODIODE BlueSensitivePhotodiodes	SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA）
BS1501-7R	100 Watt DC-DC Converters Wideinputvoltagerangesfrom8...385VDC 1or2isolatedoutputsupto48VDC 4kVACI/Oelectricstrenghtestvoltage •Ruggedelectricalandmechanicaldesign •Fullyisolatedoutputs •Operatingambienttemperaturerange –40...71°Cwithconvectioncooling	POWER-ONE Power-One
BS1601-7R	100 Watt DC-DC Converters Wideinputvoltagerangesfrom8...385VDC 1or2isolatedoutputsupto48VDC 4kVACI/Oelectricstrenghtestvoltage •Ruggedelectricalandmechanicaldesign •Fullyisolatedoutputs •Operatingambienttemperaturerange –40...71°Cwithconvectioncooling	POWER-ONE Power-One
BS170	TMOS FET Switching(N-Channel-Enhancement) TMOSFETSwitching N–Channel—Enhancement	MotorolaMotorola, Inc 摩托罗拉
BS170	N-channel vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES •VerylowRDS(on). •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitching. •Nosecondarybreakdow	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦
BS170	N-Channel 60-V (D-S) MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI	VishayVishay Siliconix 威世科技
BS170	N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theycanb	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
BS170	N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features •HighInputImpedance •FastSwitchingSpeed •CMOSLogicCompatibleInput •NoThermalRunawayorSecondaryBreakdFeatures	DIODESDiodes Incorporated 达尔科技
BS170	DMOS Transistors (N-Channel) FEATURES ♦Highinputimpedance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown	GE GE Industrial Company
BS170	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS170	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V	SIEMENS Siemens Ltd
BS170	N-Channel 60-V (D-S) MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI	VishayVishay Siliconix 威世科技
BS170F	60Volt VDS FEATURES 60VoltVDS RDS(ON)=5Ω PARTMARKINGDETAIL–MV	DIODESDiodes Incorporated 达尔科技
BS170FTA	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES 60VoltVDS RDS(ON)=5Ω PARTMARKINGDETAIL–MV	DIODESDiodes Incorporated 达尔科技
BS170FTA	N-Channel 60-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司
BS170G	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS170G	Small Signal MOSFET 500 mA, 60 Volts SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS170KL	N-Channel 60-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers, Display,Memories,Transistors,etc. •BatteryOperatedSystems	VishayVishay Siliconix 威世科技
BS170KL-TR1	N-Channel 60-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers, Display,Memories,Transistors,etc. •BatteryOperatedSystems	VishayVishay Siliconix 威世科技
BS170L	N-Channel Enhancement-Mode MOS Transistor DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.	Calogic Calogic, LLC
BS170P	60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability	DIODESDiodes Incorporated 达尔科技
BS170PSTZ	60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability	DIODESDiodes Incorporated 达尔科技
BS170RL1	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS170RLRA	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS170RLRAG	Small Signal MOSFET 500 mA, 60 Volts SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司
BS170RLRM	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司

BS1产品属性

类型
描述
型号
BS1
功能描述
LED Bar-Graph Display

BS1供应商更多...

更新时间：2024-5-17 16:32:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	BS1001-7RT	POWER-ONE	21+ROHS	SIPDIP	56688	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市惊羽科技有限公司	BS1001-7R	POWERONE	24+25+/26+27+	车规-电源模块	3280	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
艾睿国际（香港）有限公司	BS1004CDSU101KT	KINGCORE	2021+	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市易讯博科技有限公司	BS1001-7R	Bel	22+	NA	80	加我QQ或微信咨询更多详细信息,	询价

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BS1晶体管资料

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