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型号 功能描述 生产厂家 企业 LOGO 操作
BRD8011

General Purpose Transistor Medium Power, PNP 80V, 1A

Specification Features • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are

ONSEMI

安森美半导体

BRD8011

High Performance Resonant Mode Controller

文件:335.17 Kbytes Page:27 Pages

ONSEMI

安森美半导体

BRD8011

High Performance Resonant Mode Controller

ONSEMI

安森美半导体

8 A Integrated Synchronous Buck Converter

Features • VIN = 4.7 V ~ 16 V • VOUT = 0.6 V ~ 0.80*VIN and up to 12 V • Integrated Power MOSFETs • Up to 8 A Output Current • Integrated 5 V LDO • Programmable Switching Frequency from 300 kHz to 1.2 MHz • Forced CCM • Both High−side and Low−side OCP Operation • Hiccup Over−Current Prote

ONSEMI

安森美半导体

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

ONSEMI

安森美半导体

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

ONSEMI

安森美半导体

General Purpose Transistor Medium Power, PNP 80V, 1A

Specification Features • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are

ONSEMI

安森美半导体

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

ONSEMI

安森美半导体

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

ONSEMI

安森美半导体

8 A Integrated Synchronous Buck Converter

Features • VIN = 4.7 V ~ 16 V • VOUT = 0.6 V ~ 0.80*VIN and up to 12 V • Integrated Power MOSFETs • Up to 8 A Output Current • Integrated 5 V LDO • Programmable Switching Frequency from 300 kHz to 1.2 MHz • Forced CCM • Both High−side and Low−side OCP Operation • Hiccup Over−Current Prote

ONSEMI

安森美半导体

High Performance Resonant Mode Controller

文件:335.17 Kbytes Page:27 Pages

ONSEMI

安森美半导体

TRIPOLAR PROTECTION FOR ISDN INTERFACES

Description Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple Trisil™ with low capacitance. Features ■ Bidirectional triple crowbar protection ■ Peak pulse current: IPP = 30 A , 10/1000 µs ■ Breakdown voltage: – TPI80N: 80 V – T

STMICROELECTRONICS

意法半导体

IF amplifier for satellite TV receivers

文件:80.12 Kbytes Page:12 Pages

PHILIPS

飞利浦

IF amplifier for satellite TV receivers

文件:80.12 Kbytes Page:12 Pages

PHILIPS

飞利浦

BRD8011产品属性

  • 类型

    描述

  • 型号

    BRD8011

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    High Performance Resonant Mode Controller

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