2,048-Bit Serial Electrically Erasable PROM

•Overview The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 128 words × 16 bits (2,048 bits), and each word can be accessed individually and data read from it and written to it. •Features • Low power CMOS

2,048-Bit Serial Electrically Erasable PROM

•Overview The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 128 words × 16 bits (2,048 bits), and each word can be accessed individually and data read from it and written to it. •Features • Low power CMOS

2,048-Bit Serial Electrically Erasable PROM

•Overview The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 128 words × 16 bits (2,048 bits), and each word can be accessed individually and data read from it and written to it. •Features • Low power CMOS

1K/2K/4K 2.0V Microwire Serial EEPROM

Description: The Microchip Technology Inc. 93LC46/56/66 are 1K, 2K and 4K low voltage serial Electrically Erasable PROMs (EEPROM). The device memory is configured as x8 or x16 bits depending on the external logic of levels of the ORG pin. Advanced CMOS technology makes these devices ideal for l

1K/2K/4K 2.0V Microwire Serial EEPROM

Description: The Microchip Technology Inc. 93LC46/56/66 are 1K, 2K and 4K low voltage serial Electrically Erasable PROMs (EEPROM). The device memory is configured as x8 or x16 bits depending on the external logic of levels of the ORG pin. Advanced CMOS technology makes these devices ideal for l

2K 3-Wire CMOS Serial EEPROM

General Description The HT93LC56 is a 2K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Features • Operating voltage VCC – Read: 2.0V~5.5V – Write: 2.4V~5.5V • Low power consumption – Oper