位置：首页 > IC中文资料第762页 > BR93L76-W
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BR93L76-W | Microwire BUS 8Kbit(512 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing | ROHM 罗姆 |   | |
BR93L76-W | High Reliability Series EEPROMs Microwire BUS 文件：1.67591 Mbytes Page：41 Pages | ROHM 罗姆 | | |
BR93L76-W | High Reliability Series EEPROMs Microwire BUS 文件：1.53671 Mbytes Page：41 Pages | ROHM 罗姆 | | |
BR93L76-W | High Reliability Series EEPROMs Microwire BUS 文件：1.97777 Mbytes Page：41 Pages | ROHM 罗姆 | | |
BR93L76-W | Microwire BUS EEPROM 文件：1.24202 Mbytes Page：39 Pages | ROHM 罗姆 | | |
BR93L76-W | 封装/外壳：8-DIP（0.300"，7.62mm） 包装：托盘 描述：IC EEPROM 8KBIT SPI 2MHZ 8DIP 集成电路（IC） 存储器 | ROHM 罗姆 | | |
BR93L76-W | Microwire BUS 8Kbit(512x16bit) EEPROM | ROHM 罗姆 | | |
Microwire BUS 8Kbit(512 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing | ROHM 罗姆 | | ||
Microwire BUS 8Kbit(512 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing | ROHM 罗姆 | | ||
Microwire BUS 8Kbit(512 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing | ROHM 罗姆 | | ||
Microwire BUS 8Kbit(512 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing | ROHM 罗姆 | | ||
Microwire BUS 8Kbit(512 x 16bit) EEPROM ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing | ROHM 罗姆 | |
BR93L76-W产品属性
- 类型
描述
- 型号
BR93L76-W
- 功能描述
IC EEPROM 8KBIT 2MHZ 8DIP
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
1
- 系列
- 格式 -
- 存储器
闪存
- 存储器类型
闪存 - NAND
- 存储容量
4G（256M x 16）
- 速度
-
- 接口
并联
- 电源电压
2.7 V ~ 3.6 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
48-TFSOP（0.724，18.40mm 宽）
- 供应商设备封装
48-TSOP I
- 包装
Digi-Reel®
- 其它名称
557-1461-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
25+ |
DIP8 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM/罗姆 |
2026+ |
DIP8 |
5300 |
原装正品,假一罚十! |
|||
ROHM |
SMDDIP |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ROHM |
25+23+ |
DIP8 |
48817 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ROHM |
18+ |
DIP8 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ROHMSEMICOND |
24+ |
8-DIP(0.300 |
3447 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RohmSemicond |
2023+ |
8-DIP |
50000 |
原装现货 |
|||
Rohm Semiconductor |
23+ |
8-DIP |
7300 |
专注配单,只做原装进口现货 |
|||
ROHM |
25+ |
SMD |
20000 |
专做罗姆，一系列可以订货排单，只做原装正品假一罚十 |
|||
ROHM |
12+ |
DIP8 |
5300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
BR93L76-W规格书下载地址
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2019-9-7
DdatasheetPDF页码索引
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