TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES * Surge overload rating: 125 Amperes peak * Low forward voltage drop * Small size: simple installation

NPN Silicon AF Transistor

NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP)

NPN Silicon AF Transistor (For general AF application High collector current High current gain)

NPN Silicon AF Transistor ● For general AF application ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP 69 (PNP)

NPN Silicon AF Transistors (For general AF applications High collector current)

NPN Silicon AF Transistors ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCX 69 (PNP)

丝印代码：CB；NPN Silicon AF Transistors

NPN Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX69 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

丝印代码：CB；For general AF applications

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