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型号 功能描述 生产厂家 企业 LOGO 操作
BR351W

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Surge overload ratings-400 Amperes * Plastic case with heatsink for Maximum Heat Dissipation * Low forward voltage drop

DCCOM

道全

BR351W

SINGLE-PHASE BRIDGE RECTIFIER

SINGLE-PHASE BRIDGE RECTIFIER VOL TAGERANGE 50 to1000 Volts CURRENT 35 Amperes FEATURES l Low cost l This series is UL recognized under component index, file number E127707 l High forward surge current capability l Integrally molded heatsink provide very low th

MIC

昌福电子

BR351W

SILICON BRIDGE RECTIFIERS

文件:235.02 Kbytes Page:2 Pages

SHUNYE

顺烨电子

BR351W

SINGLE-PHASE BRIDGE RECTIFIER

文件:144.52 Kbytes Page:2 Pages

WINNERJOIN

永而佳

BR351W

桥式整流器 35A 100V-Wire Leads

RECTRON

丽正

BR351W

Rectifiers

MIC

昌福电子

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

STMICROELECTRONICS

意法半导体

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

MOTOROLA

摩托罗拉

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

MOTOROLA

摩托罗拉

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum

NTE

Square Type

文件:30.74 Kbytes Page:1 Pages

PANASONIC

松下

BR351W产品属性

  • 类型

    描述

  • 本司归类:

    STANDARD

  • 正向额定电流(Amp):

    35

  • 正向压降(Volt):

    1.02

  • 逆向耐压(Volt):

    100

  • 逆向漏电(uAmp):

    10

  • 耐正向电流浪涌能力(Amp):

    400

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