| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BR351W | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Surge overload ratings-400 Amperes * Plastic case with heatsink for Maximum Heat Dissipation * Low forward voltage drop | DCCOM 道全 | ||
BR351W | SINGLE-PHASE BRIDGE RECTIFIER SINGLE-PHASE BRIDGE RECTIFIER VOL TAGERANGE 50 to1000 Volts CURRENT 35 Amperes FEATURES l Low cost l This series is UL recognized under component index, file number E127707 l High forward surge current capability l Integrally molded heatsink provide very low th | MIC 昌福电子 | ||
BR351W | SILICON BRIDGE RECTIFIERS 文件:235.02 Kbytes Page:2 Pages | SHUNYE 顺烨电子 | ||
BR351W | SINGLE-PHASE BRIDGE RECTIFIER 文件:144.52 Kbytes Page:2 Pages | WINNERJOIN 永而佳 | ||
BR351W | 桥式整流器 35A 100V-Wire Leads | RECTRON 丽正 | ||
BR351W | Rectifiers | MIC 昌福电子 | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur | STMICROELECTRONICS 意法半导体 | |||
FAMILY OF JFET OPERATIONAL AMPLIFIERS JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo | MOTOROLA 摩托罗拉 | |||
FAMILY OF JFET OPERATIONAL AMPLIFIERS JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo | MOTOROLA 摩托罗拉 | |||
Silicon NPN Transistor RF Power Amp, Driver Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum | NTE | |||
Square Type 文件:30.74 Kbytes Page:1 Pages | PANASONIC 松下 |
BR351W产品属性
- 类型
描述
- 本司归类:
STANDARD
- 正向额定电流(Amp):
35
- 正向压降(Volt):
1.02
- 逆向耐压(Volt):
100
- 逆向漏电(uAmp):
10
- 耐正向电流浪涌能力(Amp):
400
BR351W规格书下载地址
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2019-9-7
DdatasheetPDF页码索引
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