| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BR351L | SILICON BRIDGE RECTIFIERS FEATURES ● Plastic case with heatsink for heat dissipation ● Surge overload -240~400 Amperes peak ● The plastic package has UL flammability classification 94V-0 | GOOD-ARK 固锝电子 | ||
BR351L | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Surge overload ratings - 400 Amperes * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * Low forward voltage drop * | DCCOM 道全 | ||
BR351L | 桥式整流器 BR-L/IF:35A/ Vol:100V/ VF@IF:17.5A=>1V/ Tj:-55~150℃/ | HY 虹扬科技 | ||
BR351L | SILICON BRIDGE RECTIFIERS 文件:37.16 Kbytes Page:2 Pages | HY 虹扬科技 | ||
BR351L | Silicon Bridge Rectifiers 文件:398.72 Kbytes Page:3 Pages | HY 虹扬科技 | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur | STMICROELECTRONICS 意法半导体 | |||
FAMILY OF JFET OPERATIONAL AMPLIFIERS JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo | MOTOROLA 摩托罗拉 | |||
FAMILY OF JFET OPERATIONAL AMPLIFIERS JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo | MOTOROLA 摩托罗拉 | |||
Silicon NPN Transistor RF Power Amp, Driver Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum | NTE | |||
Square Type 文件:30.74 Kbytes Page:1 Pages | PANASONIC 松下 |
BR351L产品属性
- 类型
描述
- VRRM(V):
100
- IO(A):
35
- IFSM(A):
400
- VF(V):
1.10
- IR(uA):
10
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
23+ |
DIP-4 |
68585 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
BR351L规格书下载地址
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DdatasheetPDF页码索引
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