SPI BUS 8Kbit (1,024 x 8bit) EEPROM

文件：328.74 Kbytes Page：6 Pages

SPI BUS Serial EEPROMs

文件：2.52891 Mbytes Page：17 Pages

SPI BUS Serial EEPROMs

文件：528.07 Kbytes Page：17 Pages

SPI BUS Serial EEPROMs

文件：577.35 Kbytes Page：17 Pages

SPI BUS Serial EEPROMs

文件：577.35 Kbytes Page：17 Pages

Htgh speed clock action up to 5MHz(Max.), Wait function by HOLD terminal

文件：577.35 Kbytes Page：17 Pages

SPI BUS 8Kbit (1,024 x 8bit) EEPROM

16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

GENERAL DESCRIPTION The A25L016 is 16M bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time,using the Page Program instruction. The memory is organized as 32 blocks, each containing

16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

GENERAL DESCRIPTION The A25L016 is 16M bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time,using the Page Program instruction. The memory is organized as 32 blocks, each containing

16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

GENERAL DESCRIPTION The A25L016 is 16M bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time,using the Page Program instruction. The memory is organized as 32 blocks, each containing

16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

GENERAL DESCRIPTION The A25L016 is 16M bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time,using the Page Program instruction. The memory is organized as 32 blocks, each containing

16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

GENERAL DESCRIPTION The A25L016 is 16M bit Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time,using the Page Program instruction. The memory is organized as 32 blocks, each containing