TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Surge overload ratings-400 Amperes * Plastic case with heatsink for Maximum Heat Dissipation * Low forward voltage drop

SINGLE-PHASE BRIDGE RECTIFIER

FEATURES ● Low cost ● This series is UL recognized under component index, file number E127707 ● High forward surge current capability ● Integrally molded heatsink provide very low thermal resistance ● High isolation voltage from case to lugs ● High temperature soldering guaranteed: 260 °C/10

SINGLE-PHASE BRIDGE RECTIFIER

FEATURES • Low cost • This series is UL recognized under component index, file number E127707 • High forward surge current capability • Integrally molded heatsink provide very low thermal resistance. • High isolation voltage from case to leads. • High temperature soldering guaranteed: 260/10

Rectifiers

N-channel enhancement mode vertical D-MOS transistors

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit