| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BR1501W | SILICON BRIDGE RECTIFIERS FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free | EIC |   | |
BR1501W | SILICON BRIDGE RECTIFIERS FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free | EIC | | |
BR1501W | SILICON BRIDGE RECTIFIERS FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BR1501W | Silicon Bridge Rectifiers Features ◇ Rating to 1000V PRV ◇ Surge overload rating to 300 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 method 208 ◇ Mounting: thru hole for # 8 screw Mou | LUGUANG 鲁光电子 | | |
BR1501W | SILICON BRIDGE RECTIFIERS FEATURES ◇ Rating to 1000V PRV ◇ Surge overload rating to 300 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 method 208 ◇ Mounting: thru hole for # 8 screw Mou | DSK | | |
BR1501W | 整流桥 | YJYCOIN 益嘉源 | | |
BR1501W | Silicon Bridge Rectifiers 文件：402.49 Kbytes Page：3 Pages | HY 虹扬科技 | | |
BR1501W | Bridge Rectifier 文件：97.21 Kbytes Page：2 Pages | YANGJIE 扬杰电子 | | |
BR1501W | SILICON BRIDGE RECTIFIERS 文件：175.96 Kbytes Page：2 Pages | EIC | | |
丝印代码：M1501；1.6 GHz GaAs LOW NOISE AMPLIFIER The MRFIC1501 is a low cost yet high performance two–stage, low–noise amplifier designed primarily for use in Global Positioning Satellite System (GPS) and other L–band satellite receivers. The broadband nature of the design makes the device applicable to a variety of L–band applications where hig | MOTOROLA 摩托罗拉 | | ||
N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
PLLatinumTM 1.1 GHz Frequency Synthesizer for RF Personal Communications 文件：367.82 Kbytes Page：22 Pages | NSC 国半 | | ||
PLLatinumTM 1.1 GHz Frequency Synthesizer for RF Personal Communications 文件：367.82 Kbytes Page：22 Pages | NSC 国半 | |
BR1501W产品属性
- 类型
描述
- VRM (V)：
100
- Io_Max(A)：
15
- VF_Max(V)：
1
- Rated lo(A)：
7.5
- IFSM_Max(A)：
300
- IR@25℃IR(uA)：
5
- Tj（℃）：
-55～+150
- Status：
Active
BR1501W规格书下载地址
BR1501W参数引脚图相关
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- BR130
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BR1501W数据表相关新闻
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产品描述：CEDV 锂离子电池电量监测计和电池管理控制器
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锂离子，锂聚合物电池管理，4.2 V锂离子，锂聚合物电池管理，SON-8电池保护电池管理，3 A电池管理，充电管理SMD / SMT电池管理，LiFePO4电池管理
2020-8-4
DdatasheetPDF页码索引
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