SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -240 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -240 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -240 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

SILICON BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -240 amperes peak ● Low forward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

SILICON BRIDGE RECTIFIER

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Silicon Bridge Rectifiers

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SILICON BRIDGE RECTIFIERS

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桥式整流器

BR8/IF:10A/ Vol:200V/ VF@IF:5A=>1.1V/ Tj:-55~150℃/

GLASS PASSIVATED BRIDGE RECTIFIERS

GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Lowforward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Lowforward voltage drop ● Small size; simple installation ● Sliver plated copper leads ● Mounting position: Any

GLASS PASSIVATED BRIDGE RECTIFIERS

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Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Glass Passivated Bridge Rectifiers

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封装/外壳：4-方形，BR-8 包装：管件 描述：BRIDGE RECT 1PHASE 200V 10A BR-8 分立半导体产品 二极管 - 桥式整流器

Bridge Rectifiers

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp