SRAM Nonvolatile Controller Unit

文件：107.52 Kbytes Page：12 Pages

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC SRAM NONVOL CNTRLR 8-SOIC 集成电路（IC） 控制器

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

丝印代码：2201-N；SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

SRAM Nonvolatile Controller Unit

文件：107.52 Kbytes Page：12 Pages

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC SRAM NONVOLATILE CNTRLR 8SOIC 集成电路（IC） 控制器

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

SRAM Nonvolatile Controller Unit

文件：303.25 Kbytes Page：15 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

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0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr