Silicon NPN Phototransistor

DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters.     FEATURES • Package type: leaded • Package form: T-1¾ • Dimensi

Silicon NPN Phototransistors

DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensio

Silicon NPN Phototransistor, RoHS Compliant

Package type: leaded\nPackage form: T-1¾\nDimensions (in mm): Ø 5;

Silicon NPN Phototransistor

文件：114.64 Kbytes Page：5 Pages

封装/外壳：径向，5mm 直径（T 1 3/4） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PHOTOTRANSISTOR 900 TO 980 NM 传感器，变送器 光学传感器 - 光电晶体管

Silicon NPN Phototransistor, RoHS Compliant

文件：112.5 Kbytes Page：5 Pages

Silicon NPN Phototransistors

DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensio

Silicon NPN Phototransistor, RoHS Compliant

文件：112.5 Kbytes Page：5 Pages

Silicon NPN Phototransistor

文件：114.64 Kbytes Page：5 Pages