位置：首页 > IC中文资料第2780页 > BPR40120F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an | WOLFSPEED |   | ||
120 W, RF Power GaN HEMT Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga | WOLFSPEED | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | CREE 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | CREE 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | CREE 科锐 | |
BPR40120F产品属性
- 类型
描述
- 型号
BPR40120F
- 制造商
TT Electronics/BI Technologies
- 功能描述
BPR40120F
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CORNELLDUBILIER-CDE |
25+ |
Bulk |
880000 |
明嘉莱只做原装正品现货 |
|||
CREE |
24+ |
SMD |
1680 |
一级代理原装进口现货 |
|||
CREE/科锐 |
2540+ |
RFMOSFET |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CREE |
26+ |
BGA |
21530 |
专业军工优势原装现货价格优惠 假一赔百 |
|||
Cree |
25+23+ |
BGA |
19489 |
绝对原装正品全新进口深圳现货 |
|||
CREE |
18+ |
SMD |
85600 |
保证进口原装可开17%增值税发票 |
|||
CREE |
23+ |
N/A |
10065 |
原装正品,有挂有货,假一赔十 |
|||
CREE/科锐 |
24+ |
SMD |
15448 |
郑重承诺只做原装进口现货 |
|||
CREE |
25+ |
N/A |
90000 |
进口原装现货假一罚十价格合理 |
|||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
BPR40120F规格书下载地址
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2019-3-5
DdatasheetPDF页码索引
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