HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are a

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System

HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are a

HF/VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated HF and VHF transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Features: It has a 3/8

Trans GP BJT NPN 36V 4A 4-Pin SOT-123A