UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismat

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW81 is Designed for Class A,B or C UHF & VHF Communications FEATURES: • PG = 6 dB Typical at 470 MHz • Omnigold™ Metallization System

UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismat

UHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the UHF and VHF range for nominal supply voltages up to 13.5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch cond

Trans GP BJT NPN 17V 2.5A 4-Pin CRPM