HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to wit

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System

HF/VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power ransmitters in the HFand VHF. bands. The transistor presents excellent performance as a linear amplifier in the HF band. It is resistance stabilized and is guaranteed to withstand se

Trans GP BJT NPN 35V 8A 4-Pin CRFM