位置：首页 > IC中文资料第759页 > BLV99SL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLV99SL | UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting | PHILIPS 飞利浦 |   | |
BLV99SL | UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
BLV99SL产品属性
- 类型
描述
- 型号
BLV99SL
- 功能描述
射频双极电源晶体管 RF Bipolar Trans
- RoHS
否
- 制造商
M/A-COM Technology Solutions
- 配置
Single 直流集电极/Base Gain hfe
- Min
40
- 最大工作频率
30 MHz 集电极—发射极最大电压
- VCEO
25 V 发射极 - 基极电压
- VEBO
4 V
- 集电极连续电流
20 A
- 功率耗散
250 W
- 封装/箱体
Case 211-11
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
DIP-14 |
37500 |
原装正品现货,价格有优势! |
||||
PHI |
24+ |
13000 |
|||||
PHI |
2602+ |
DIP-14 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
PHI |
25+ |
SOT172D-4十字架 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
PHI |
2023+ |
SOT172D-4十字架 |
50000 |
原装现货 |
BLV99SL规格书下载地址
BLV99SL参数引脚图相关
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BLV99SL数据表相关新闻
BLVR-L01D-B2NS-N
进口代理
2024-9-10BM08B-XASS-TF
BM08B-XASS-TF
2023-4-24BlueNRG-232
BlueNRG-232
2022-8-1BLUENRG-234
全新原装现货 支持第三方机构验证
2022-6-22BM2596-ADJ
BM2596-ADJ，当天发货0755-82732291全新原装现货或门市自取.
2020-9-30BLUENRG-134公司原装现货
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2020-1-14
DdatasheetPDF页码索引
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