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BLV33晶体管资料
BLV33别名：BLV33三极管、BLV33晶体管、BLV33晶体三极管
BLV33生产厂家：
BLV33制作材料：Si-NPN
BLV33性质：甚高频 （VHF）_功率放大 （L）
BLV33封装形式：贴片封装
BLV33极限工作电压：65V
BLV33最大电流允许值：12.5A
BLV33最大工作频率：224MHZ
BLV33引脚数：4
BLV33最大耗散功率：1.9W
BLV33放大倍数：
BLV33图片代号：G-256
BLV33vtest：65
BLV33htest：224000000
- BLV33atest：12.5
BLV33wtest：1.9
BLV33代换 BLV33用什么型号代替：
BLV33价格
参考价格：￥515.7219
型号：BLV33 品牌：ASI 备注：这里有BLV33多少钱，2025年最近7天走势，今日出价，今日竞价，BLV33批发/采购报价，BLV33行情走势销售排行榜，BLV33报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLV33 | VHF linear power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄16 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. FEATURES • Diffused emitter ballasting resistors for an optimum temperature profile • Gold sandwich metallization ensures exce | Philips 飞利浦 |   | |
BLV33 | NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33 is a Common Emitter Device Designed for Class A Television Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting | ASI | | |
BLV33 | VHF linear power transistor Description: NPN silicon planar epitaxial transistor encapsulated in a 1/16 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. Primarily intended for use in linear VHF amplifiers for television transmitters and transposers. Features: ∗ Diffused emitter balla | ELEFLOW | | |
BLV33 | VHP linear power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a Vie 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. FEATURES • Diffused emitter ballasting resistors for an optimum temperature profile • Gold sandwich metallization ensures excel | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BLV33 | Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147 | ETC 知名厂家 | ETC | |
VHF linear power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄2” 6 lead SOT119A capstan package with ceramic cap. All leads are isolated from the flange. FEATURES • Internally matched input for wideband operation and high power gain • Diffused emitter ballasting resistors for an | Philips 飞利浦 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: • Gold Metalization • Internal Input Matching • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV33F is Designed for Operation in Band II! TV Transposers and Transmitter Amplifiers from 170 to 230MHz. FEATURES: • Gold Metalization • Internal Input Matching • Omnigold™ Metalization System | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Trans GP BJT NPN 33V 12.5A 6-Pin CDFM | ETC 知名厂家 | ETC | |
BLV33产品属性
- 类型
描述
- 型号
BLV33
- 功能描述
射频双极电源晶体管 RF Transistor
- RoHS
否
- 制造商
M/A-COM Technology Solutions
- 配置
Single 直流集电极/Base Gain hfe
- Min
40
- 最大工作频率
30 MHz 集电极—发射极最大电压
- VCEO
25 V 发射极 - 基极电压
- VEBO
4 V
- 集电极连续电流
20 A
- 功率耗散
250 W
- 封装/箱体
Case 211-11
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
TO-57 |
9630 |
我们只做原装正品现货!量大价优! |
|||
PH |
23+ |
高频管 |
750 |
专营高频管模块,全新原装! |
|||
PHI |
22+ |
高频管 |
350 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
PHI |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
PHI |
05+ |
原厂原装 |
54 |
只做全新原装真实现货供应 |
|||
PH |
25+ |
CAN |
500000 |
行业低价,代理渠道 |
|||
PHI |
24+ |
SMD |
5000 |
全新原装正品,现货销售 |
|||
PH |
24+ |
580 |
|||||
PH |
18+ |
TO-57 |
85600 |
保证进口原装可开17%增值税发票 |
|||
PHI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
BLV33芯片相关品牌
BLV33规格书下载地址
BLV33参数引脚图相关
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BLV33数据表相关新闻
BLVR-L01D-B2NS-N
进口代理
2024-9-10BM08B-XASS-TF
BM08B-XASS-TF
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全新原装现货 支持第三方机构验证
2022-6-22BM2596-ADJ
BM2596-ADJ，当天发货0755-82732291全新原装现货或门市自取.
2020-9-30BLUENRG-134公司原装现货
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2020-1-14
DdatasheetPDF页码索引
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