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BLV33晶体管资料

  • BLV33别名:BLV33三极管、BLV33晶体管、BLV33晶体三极管

  • BLV33生产厂家

  • BLV33制作材料:Si-NPN

  • BLV33性质:甚高频 (VHF)_功率放大 (L)

  • BLV33封装形式:贴片封装

  • BLV33极限工作电压:65V

  • BLV33最大电流允许值:12.5A

  • BLV33最大工作频率:224MHZ

  • BLV33引脚数:4

  • BLV33最大耗散功率:1.9W

  • BLV33放大倍数

  • BLV33图片代号:G-256

  • BLV33vtest:65

  • BLV33htest:224000000

  • BLV33atest:12.5

  • BLV33wtest:1.9

  • BLV33代换 BLV33用什么型号代替

BLV33价格

参考价格:¥515.7219

型号:BLV33 品牌:ASI 备注:这里有BLV33多少钱,2026年最近7天走势,今日出价,今日竞价,BLV33批发/采购报价,BLV33行情走势销售排行榜,BLV33报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BLV33

VHF linear power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄16 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. FEATURES • Diffused emitter ballasting resistors for an optimum temperature profile • Gold sandwich metallization ensures exce

PHILIPS

飞利浦

BLV33

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV33 is a Common Emitter Device Designed for Class A Television Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

ASI

BLV33

VHP linear power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a Vie 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. FEATURES • Diffused emitter ballasting resistors for an optimum temperature profile • Gold sandwich metallization ensures excel

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV33

VHF linear power transistor

Description: NPN silicon planar epitaxial transistor encapsulated in a 1/16 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud. Primarily intended for use in linear VHF amplifiers for television transmitters and transposers. Features: ∗ Diffused emitter balla

ELEFLOW

BLV33

Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: BLV33F is Designed for Operation in Band II! TV Transposers and Transmitter Amplifiers from 170 to 230MHz. FEATURES: • Gold Metalization • Internal Input Matching • Omnigold™ Metalization System

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VHF linear power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄2” 6 lead SOT119A capstan package with ceramic cap. All leads are isolated from the flange. FEATURES • Internally matched input for wideband operation and high power gain • Diffused emitter ballasting resistors for an

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: • Gold Metalization • Internal Input Matching • Omnigold™ Metalization System

ASI

Trans GP BJT NPN 33V 12.5A 6-Pin CDFM

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV33产品属性

  • 类型

    描述

  • Output Power:

    26.5(Typ)W

  • Number of Elements per Chip:

    1

  • Minimum Operating Temperature:

    -65°C

  • Minimum DC Current Gain:

    100(Max)

  • Maximum Transition Frequency:

    750(Typ)MHz

  • Maximum Operating Temperature:

    200°C

  • Maximum Emitter Base Voltage:

    4V

  • Maximum DC Collector Current:

    12.5A

  • Maximum Collector Emitter Voltage:

    33V

  • Maximum Collector Emitter Saturation Voltage:

    15@3A@25AV

  • Maximum Base Emitter Saturation Voltage:

    0.75(Typ)@0.6A@6AV

  • Material:

    Si

  • Configuration:

    Single Dual Emitter

更新时间:2026-5-14 12:20:00
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