位置：首页 > IC中文资料第7754页 > BLS7
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLS7 | Axial Lead and Cartridge Fuses- Special Midget Midget Fuses Supplementary Overcurrent Protection | Littelfuse 力特 |   | |
BLS7 | Axial Lead and Cartridge Fuses 文件：122.34 Kbytes Page：1 Pages | Littelfuse 力特 | | |
LDMOS S-band radar power transistor General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent th | Ampleon 安谱隆 | | ||
LDMOS S-band radar power transistor General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent th | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Power LDMOS transistor General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Internally matched for ease of use Integrated ESD prot | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Features and benefits High efficiency Excellent ruggedness Designed for S-band operation (2.7 GHz to 2.9 GHz) Excellent thermal stability Easy power cont | Ampleon 安谱隆 | | ||
LDMOS S-band radar power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Features and benefits High efficiency Excellent ruggedness Designed for S-band operation (2.7 GHz to 2.9 GHz) Excellent thermal stability Easy power cont | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent th | Ampleon 安谱隆 | | ||
LDMOS S-band radar power transistor General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Features and benefits High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability Easy power control Integrate | Ampleon 安谱隆 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent th | Ampleon 安谱隆 | | ||
70R420,hv,高压,sj,超结 | Belling 上海贝岭 | | ||
N-channel Enhanced MOSFETs | Belling 上海贝岭 | | ||
N-channel Enhanced MOSFETs | Belling 上海贝岭 | | ||
Power LDMOS transistor 文件：301.86 Kbytes Page：9 Pages | Philips 飞利浦 | | ||
LDMOS S-band radar power transistor 文件：172.49 Kbytes Page：13 Pages | Philips 飞利浦 | | ||
LDMOS S-band radar power transistor 文件：334.67 Kbytes Page：15 Pages | Philips 飞利浦 | | ||
封装/外壳：SOT-539A 包装：托盘 描述：RF FET LDMOS 65V 12DB SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 65V 12DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
LDMOS S-band radar power transistor 文件：129.3 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
BLS7G3135L-350P_15 文件：188.58 Kbytes Page：13 Pages | Philips 飞利浦 | | ||
LDMOS S-band radar power transistor 文件：138.91 Kbytes Page：10 Pages | Philips 飞利浦 | |
BLS7产品属性
- 类型
描述
- 型号
BLS7
- 制造商
LITTELFUSE
- 制造商全称
Littelfuse
- 功能描述
Axial Lead and Cartridge Fuses- Special Midget
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
3372 |
原装现货,当天可交货,原型号开票 |
|||
恩XP |
25+ |
SMD |
53 |
原装正品,假一罚十! |
|||
恩XP |
12+;1240+ |
N/A |
41 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
24+ |
SMD |
1680 |
NXP专营品牌进口原装现货假一赔十 |
|||
恩XP |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
AMP |
24+ |
SMD |
6618 |
公司现货库存,支持实单 |
|||
恩XP |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
上海贝岭 |
22+ |
TO-252 |
150000 |
上海贝岭全系列在售,优势渠道 |
|||
上海贝岭 |
23+ |
TO-252 |
100000 |
原装正品假一罚十,代理渠道价格优 |
|||
恩XP |
19+ |
SMD |
15868 |
BLS7规格书下载地址
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DdatasheetPDF页码索引
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