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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BLS7 | Axial Lead and Cartridge Fuses- Special Midget MidgetFuses SupplementaryOvercurrentProtection | LittelfuseLittelfuse Inc. 力特力特公司 |  |   |
BLS7 | Axial Lead and Cartridge Fuses 文件：122.34 Kbytes Page：1 Pages | LittelfuseLittelfuse Inc. 力特力特公司 | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorintendedforradarapplicationsinthe3.1GHzto3.5GHz range. Featuresandbenefits Easypowercontrol IntegratedESDprotection Highflexibilitywithrespecttopulseformats Excellentruggedness Highefficiency Excellentth | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 |  | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorintendedforradarapplicationsinthe3.1GHzto3.5GHz range. Featuresandbenefits Easypowercontrol IntegratedESDprotection Highflexibilitywithrespecttopulseformats Excellentruggedness Highefficiency Excellentth | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
Power LDMOS transistor Generaldescription 105WLDMOSpowertransistorforS-bandradarapplicationsatfrequenciesfrom 2300MHzto2500MHz. Featuresandbenefits Excellentruggedness Highefficiency LowRthprovidingexcellentthermalstability Internallymatchedforeaseofuse IntegratedESDprot | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom2.7GHzto2.9GHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■DesignedforS-bandoperation(2.7GHzto2.9GHz) ■Excellentthermalstability ■Easypowercontr | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom 2.7GHzto2.9GHz. Featuresandbenefits Highefficiency Excellentruggedness DesignedforS-bandoperation(2.7GHzto2.9GHz) Excellentthermalstability Easypowercont | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom2.7GHzto2.9GHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■DesignedforS-bandoperation(2.7GHzto2.9GHz) ■Excellentthermalstability ■Easypowercontr | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom 2.7GHzto2.9GHz. Featuresandbenefits Highefficiency Excellentruggedness DesignedforS-bandoperation(2.7GHzto2.9GHz) Excellentthermalstability Easypowercont | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorintendedforradarapplicationsinthe3.1GHzto3.5GHz range. Featuresandbenefits Easypowercontrol IntegratedESDprotection Highflexibilitywithrespecttopulseformats Excellentruggedness Highefficiency Excellentth | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
LDMOS S-band radar power transistor Generaldescription 200WLDMOSpowertransistorforS-bandradarapplicationsinthefrequencyrangefrom 3100MHzto3500MHz. Featuresandbenefits Highefficiency Excellentruggedness Designedforbroadbandoperation Excellentthermalstability Easypowercontrol Integrate | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
LDMOS S-band radar power transistor Generaldescription 350WLDMOSpowertransistorintendedforradarapplicationsinthe3.1GHzto3.5GHz range. Featuresandbenefits Easypowercontrol IntegratedESDprotection Highflexibilitywithrespecttopulseformats Excellentruggedness Highefficiency Excellentth | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Power LDMOS transistor 文件：301.86 Kbytes Page：9 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
LDMOS S-band radar power transistor 文件：172.49 Kbytes Page：13 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
LDMOS S-band radar power transistor 文件：334.67 Kbytes Page：15 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
封装/外壳：SOT-539A 包装：托盘 描述：RF FET LDMOS 65V 12DB SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频 | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
封装/外壳：SOT-539B 包装：托盘 描述：RF FET LDMOS 65V 12DB SOT539B 分立半导体产品 晶体管 - FET，MOSFET - 射频 | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
LDMOS S-band radar power transistor 文件：129.3 Kbytes Page：12 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
BLS7G3135L-350P_15 文件：188.58 Kbytes Page：13 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
LDMOS S-band radar power transistor 文件：138.91 Kbytes Page：10 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
BLS7产品属性
- 类型
描述
- 型号
BLS7
- 制造商
LITTELFUSE
- 制造商全称
Littelfuse
- 功能描述
Axial Lead and Cartridge Fuses- Special Midget
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Ampleon USA Inc. |
22+ |
SOT539B |
9000 |
原厂渠道,现货配单 |
|||
NXP/恩智浦 |
18+ |
SOT539A |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
NXP |
19+ |
SMD |
15868 |
||||
TI |
2022+ |
VQFN-48 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NXP |
2023+ |
SOT539B |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NXP |
21+ |
SOT539B |
50000 |
全新原装正品现货,支持订货 |
|||
Ampleon USA Inc. |
21+ |
SOT539B |
13880 |
公司只售原装,支持实单 |
|||
23+ |
N/A |
90150 |
正品授权货源可靠 |
||||
NXP/恩智浦 |
23+ |
NA/ |
3372 |
原装现货,当天可交货,原型号开票 |
|||
Ampleon USA Inc. |
24+ |
SOT-502B |
30000 |
晶体管-分立半导体产品-原装正品 |
BLS7芯片相关品牌
BLS7规格书下载地址
BLS7参数引脚图相关
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BLS7数据表相关新闻
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2019-9-23
DdatasheetPDF页码索引
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