RF Cascode Amplifier

Description BGA416 is a monolithic silicon cascode amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Feature • GMA = 23 dB at 900 MHz • Ultra high reverse isolation, 60 dB at 900 MHz • Low noise figure, F50Ω = 1.2 dB at 900 MHz • On chip bias circuit

通用MMIC调频收音机低噪放大器

BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. ·GMA = 23 dB at 900MHz\n ·Ultra high reverse isolation, 60 dB at 900 MHz\n ·Low noise figure, F50Ω = 1.2 dB at 900 MHz\n ·On chip bias circuitry, 5.5 mA bias current at VCC = 3 V\n ·Typical supply voltage: 2.5 to 5.0 V\n ·SIEGET®-25 technology\n ·Pb-free (RoHS compliant) package;

RF Cascode Amplifier

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封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR） 描述：IC AMP CELL 100MHZ-3GHZ SOT143-4 RF/IF，射频/中频和 RFID 射频放大器

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ S

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON

Dual Low-Power, 120MHz Op Amp

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Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

3.0 mm X 7.0 mm Series

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