MMIC wideband amplifier

General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (3.3 GHz at 3 dB bandwidth) ■ Flat 22 dB gain (±1 dB up to 2.8 GHz)

RF Manual 16th edition

MMIC wideband amplifier

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP ISM 0HZ-4GHZ 6TSSOP RF/IF，射频/中频和 RFID 射频放大器

NPN (FM RADIO AMP, MIX, CONV OSC, IF AMP)

FM RADIO AMP, MIX, CONV, OSC, IF AMP • High Power Gain Gpe = 30dB

丝印代码：B1*；FM RADIO AMP, MIX, CONV, OSC, IF AMP

FM RADIO AMP, MIX, CONV, OSC, IF AMP

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

Complementary Switch FET Drivers

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