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BGA价格
参考价格:¥122.3147
型号:BGA0001-S 品牌:Chip Quik 备注:这里有BGA多少钱,2025年最近7天走势,今日出价,今日竞价,BGA批发/采购报价,BGA行情走势销售排行榜,BGA报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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EFM32 Giant Gecko Series 1 Family EFM32GG11 Family Data Sheet • ARM Cortex-M4 at 72 MHz • Ultra low energy operation • 80 μA/MHz in Energy Mode 0 (EM0) • 2.1 μA EM2 Deep Sleep current (RTCC running with state and RAM retention) • Octal/Quad-SPI memory interface w/ XIP • SD/MMC/SDIO Host Controller • 10/100 Ethernet MAC with 802.3az EEE, IEEE1588 • D | SILABS Silicon Laboratories | |||
Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications 1 Features Operation frequencies: 1164 to 1300 MHz Ultra low current consumption: 1.3 mA Wide supply voltage range: 1.1 V to 2.8 V High insertion power gain: 20.0 dB Low noise figure: 0.80 dB 2 kV HBM ESD protection (inluding AI pin) Only one external matching component needed | Infineon 英飞凌 | |||
Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications 1 Features Operation frequencies: 1164 to 1300 MHz Ultra low current consumption: 1.3 mA Wide supply voltage range: 1.1 V to 2.8 V High insertion power gain: 20.0 dB Low noise figure: 0.80 dB 2 kV HBM ESD protection (inluding AI pin) Only one external matching component needed | Infineon 英飞凌 | |||
Silicon MMIC amplifier DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current, low voltage • Very high power gain • Low noise figure • Integrated temperature | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
Silicon MMIC amplifier DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
900 MHz high linear low noise amplifier DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. FEATURES • Low current, low voltage • High linearity • High power gain • | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
1900 MHz high linear low noise amplifier DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package. FEATURES • Low current, low voltage • High linearity • High power gain • | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC mixer DESCRIPTION Silicon double poly MMIC mixer in a 6-lead plastic SOT363 package. FEATURES • Large frequency range: – Cellular band (900 MHz) – PCS band (1900 MHz) – WLAN band (2.4 GHz). • High isolation • High linearity • High conversion gain. APPLICATIONS Receiver side of | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC variable gain amplifier DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 5-pin SOT551A plastic SMD package for low voltage medium power applications. FEATURES • High gain • Excellent adjacent channel power rejection • Small SMD pa | Philips 飞利浦 | |||
MMIC variable gain amplifier | ETC 知名厂家 | ETC | ||
MMIC variable gain amplifier | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50 Ω • Very wide frequency range (3.6 GHz at 3 dB bandwidth) • Flat 23 dB gain (DC to 2.6 GHz at 1 dB fl | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50Ω • Very wide frequency range • Very flat gain • Unconditionally stable. APPLICA | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched to 50 Ω • Wide frequency range (3.2 GHz at 3 dB bandwidth) • Flat 21 dB gain (DC to 2.6 GHz at | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (2.7 GHz at 3 dB gain bandwidth) ■ Flat 21 dB gain (± 1 dB from DC up | Philips 飞利浦 | |||
MMIC wideband amplifier | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (3.3 GHz at 3 dB bandwidth) ■ Flat 22 dB gain (±1 dB up to 2.8 GHz) | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (3.2 GHz at 3 dB bandwidth) ■ Flat 23 dB gain (±1 dB up to 2.7 GHz) | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Features ■ Internally matched to 50 Ω ■ Wide frequency range (3.2 GHz at 3 dB bandwidth) ■ Flat 24 dB gain (±1 dB up | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched • Wide frequency range • Optimized for 900 MHz • Excellent isolation • Low noise • Unconditionally stable | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched • Wide frequency range • Very flat gain • High output power • High linearity • Unconditionally stable. | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched • Very wide frequency range • Very flat gain • High gain • High output power • Unconditionally stable. | Philips 飞利浦 | |||
MMIC wideband amplifier | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier | ETC 知名厂家 | ETC | ||
MMIC wideband amplifier | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC |
BGA产品属性
- 类型
描述
- 型号
BGA
- 功能描述
射频放大器 RF SI
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 类型
Low Noise Amplifier
- 工作频率
2.3 GHz to 2.8 GHz
- P1dB
18.5 dBm
- 输出截获点
37.5 dBm
- 功率增益类型
32 dB
- 噪声系数
0.85 dB
- 工作电源电压
5 V
- 电源电流
125 mA
- 测试频率
2.6 GHz
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
QFN-16
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
2022+ |
TSLP-4 |
48000 |
只做原装,原装,假一罚十 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Infineon/英飞凌 |
24+ |
TSLP-4 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON |
23+ |
7000 |
|||||
Infineon/英飞凌 |
23+ |
TSLP-4 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
23+ |
TSLP-4 |
6000 |
我们只做原装正品,支持检测。 |
|||
INFINEON/英飞凌 |
21+ |
NA |
15000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
Infineon(英飞凌) |
24+ |
DFN4(0.7x0.7) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Infineon(英飞凌) |
24+ |
DFN4(0 |
12051 |
原装现货,免费供样,技术支持,原厂对接 |
|||
Infineon/英飞凌 |
25 |
TSLP-4 |
6000 |
原装正品 |
BGA规格书下载地址
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BGA数据表相关新闻
B-G474E-DPOW1
优势渠道
2023-6-29B-G431B-ESC1
优势渠道
2023-6-29BG95M6LA-64-SGNS
www.58chip.com
2022-5-20BGA524N6E6327 INFINEON/英飞凌
www.hfxcom.com
2021-11-29BGB741L7ESDE6327XTSA1
BGB741L7ESDE6327XTSA1
2021-6-23BGA2866,115
原装 现货
2019-9-6
DdatasheetPDF页码索引
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