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位置：首页 > IC中文资料第3117页 > BGA

BGA价格

参考价格：￥122.3147

型号：BGA0001-S 品牌：Chip Quik 备注：这里有BGA多少钱，2024年最近7天走势，今日出价，今日竞价，BGA批发/采购报价，BGA行情走势销售排行榜，BGA报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BGA120

EFM32 Giant Gecko Series 1 Family EFM32GG11 Family Data Sheet

•ARMCortex-M4at72MHz •Ultralowenergyoperation •80μA/MHzinEnergyMode0(EM0) •2.1μAEM2DeepSleepcurrent(RTCC runningwithstateandRAMretention) •Octal/Quad-SPImemoryinterfacew/XIP •SD/MMC/SDIOHostController •10/100EthernetMACwith802.3azEEE, IEEE1588 •D

SILABSSilicon Laboratories

芯科科技深圳芯科科技有限公司

SILABS
BGA125N6

Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications

1Features Operationfrequencies:1164to1300MHz Ultralowcurrentconsumption:1.3mA Widesupplyvoltagerange:1.1Vto2.8V Highinsertionpowergain:20.0dB Lownoisefigure:0.80dB 2kVHBMESDprotection(inludingAIpin) Onlyoneexternalmatchingcomponentneeded

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BGA125N6E6327XTSA1

Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications

1Features Operationfrequencies:1164to1300MHz Ultralowcurrentconsumption:1.3mA Widesupplyvoltagerange:1.1Vto2.8V Highinsertionpowergain:20.0dB Lownoisefigure:0.80dB 2kVHBMESDprotection(inludingAIpin) Onlyoneexternalmatchingcomponentneeded

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BGA2001

Silicon MMIC amplifier

DESCRIPTION SiliconMMICamplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Lowcurrent,lowvoltage •Veryhighpowergain •Lownoisefigure •Integratedtemperature

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2001

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2002

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2003

Silicon MMIC amplifier

DESCRIPTION SiliconMMICamplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsinaplastic,4-pinSOT343Rpackage. FEATURES •Lowcurrent •Veryhighpowergain •Lownoisefigure •Integratedtemperaturecompensatedbiasing •Con

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2003

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2011

900 MHz high linear low noise amplifier

DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)amplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsina6-pinSOT363plasticSMDpackage. FEATURES •Lowcurrent,lowvoltage •Highlinearity •Highpowergain •

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2011

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2012

1900 MHz high linear low noise amplifier

DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)amplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsina6-pinSOT363plasticSMDpackage. FEATURES •Lowcurrent,lowvoltage •Highlinearity •Highpowergain •

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2012

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2022

MMIC mixer

DESCRIPTION SilicondoublepolyMMICmixerina6-leadplasticSOT363package. FEATURES •Largefrequencyrange: –Cellularband(900MHz) –PCSband(1900MHz) –WLANband(2.4GHz). •Highisolation •Highlinearity •Highconversiongain. APPLICATIONS Receiversideof

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2022

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2031

MMIC variable gain amplifier

DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)2stagevariablegainamplifierindoublepolysilicontechnologyina5-pinSOT551AplasticSMDpackageforlowvoltagemediumpowerapplications. FEATURES •Highgain •Excellentadjacentchannelpowerrejection •SmallSMDpa

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2031

MMIC variable gain amplifier

DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)2stagevariablegainamplifierindoublepolysilicontechnologyina6-pinSOT363SMDplasticpackageforlowvoltagemediumpowerapplications. FEATURES •Highgain •Excellentadjacentchannelpowerrejection •SmallSMDpac

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA20311

MMIC variable gain amplifier

DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)2stagevariablegainamplifierindoublepolysilicontechnologyina6-pinSOT363SMDplasticpackageforlowvoltagemediumpowerapplications. FEATURES •Highgain •Excellentadjacentchannelpowerrejection •SmallSMDpac

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2031-1

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2709

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2709

MMIC wideband amplifier

DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES •Internallymatchedto50Ω •Verywidefrequencyrange(3.6GHzat3dBbandwidth) •Flat23dBgain(DCto2.6GHzat1dBfl

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2711

MMIC wideband amplifier

DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES •Internallymatchedto50Ω •Verywidefrequencyrange •Veryflatgain •Unconditionallystable. APPLICA

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2711

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2712

MMIC wideband amplifier

DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES •Internallymatchedto50Ω •Widefrequencyrange(3.2GHzat3dBbandwidth) •Flat21dBgain(DCto2.6GHzat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2712

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2714

MMIC wideband amplifier

Generaldescription SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363plasticSMDpackage. Features ■Internallymatchedto50Ω ■Widefrequencyrange(2.7GHzat3dBgainbandwidth) ■Flat21dBgain(±1dBfromDCup

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2714

MMIC wideband amplifier

Generaldescription SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363plasticSMDpackage. Features ■Internallymatchedto50Ω ■Widefrequencyrange(2.7GHzat3dBgainbandwidth) ■Flat21dBgain(±1dBfromDCup

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2714

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2715

MMIC wideband amplifier

Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. Features ■Internallymatchedto50Ω ■Widefrequencyrange(3.3GHzat3dBbandwidth) ■Flat22dBgain(±1dBupto2.8GHz)

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2715

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2716

MMIC wideband amplifier

Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. Features ■Internallymatchedto50Ω ■Widefrequencyrange(3.2GHzat3dBbandwidth) ■Flat23dBgain(±1dBupto2.7GHz)

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2716

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2717

MMIC wideband amplifier

Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. Features ■Internallymatchedto50Ω ■Widefrequencyrange(3.2GHzat3dBbandwidth) ■Flat24dBgain(±1dBup

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2717

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2748

MMIC wideband amplifier

DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES •Internallymatched •Widefrequencyrange •Optimizedfor900MHz •Excellentisolation •Lownoise •Unconditionallystable

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2748

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2771

MMIC wideband amplifier

DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES •Internallymatched •Widefrequencyrange •Veryflatgain •Highoutputpower •Highlinearity •Unconditionallystable.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2771

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2776

MMIC wideband amplifier

DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES •Internallymatched •Verywidefrequencyrange •Veryflatgain •Highgain •Highoutputpower •Unconditionallystable.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BGA2776

MMIC wideband amplifier

DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES •Internallymatched •Verywidefrequencyrange •Veryflatgain •Highgain •Highoutputpower •Unconditionallystable.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2776

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2800

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2801

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2802

MMIC wideband amplifier

Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363plasticSMDpackage. Featuresandbenefits ■Internallymatchedto50Ω ■Againof26dBat950MHz ■Outputpowerat1dBgaincompression=1dBm

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2802

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2803

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2815

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2817

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2818

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2819

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2850

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2851

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2865

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2866

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2867

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2868

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2869

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2870

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA2874

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BGA310

Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)

SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz

SIEMENS

Siemens Ltd

SIEMENS
BGA324

The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM짰 Cortex??A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode.

Description TheAtmel|SMARTSAMA5D3seriesisahigh-performance,power-efficientembeddedMPUbasedontheARMCortex-A5processor,achieving536MHzwithpowerconsumptionlevelsbelow0.5mWinlow-powermode.Thedevicefeaturesafloatingpointunitforhigh-precisioncomputingandacce

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Atmel

BGA产品属性

  • 类型

    描述

  • 型号

    BGA

  • 功能描述

    射频放大器 RF SI

  • RoHS

    否

  • 制造商

    Skyworks Solutions, Inc.

  • 类型

    Low Noise Amplifier

  • 工作频率

    2.3 GHz to 2.8 GHz

  • P1dB

    18.5 dBm

  • 输出截获点

    37.5 dBm

  • 功率增益类型

    32 dB

  • 噪声系数

    0.85 dB

  • 工作电源电压

    5 V

  • 电源电流

    125 mA

  • 测试频率

    2.6 GHz

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    QFN-16

  • 封装

    Reel

BGA供应商更多...

更新时间：2024-4-26 23:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市晴轩时代电子有限公司
BGA123L4E6327
Infineon/英飞凌
21+
TSLP-4
8800
公司只作原装正品
询价
深圳市高捷芯城科技有限公司
BGA123L4E6327
Infineon(英飞凌)
23+
DFN4(0.7x0.7)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
BGA123L4E6327
Infineon(英飞凌)
23+
DFN4(0
12051
原装现货,免费供样,技术支持,原厂对接
询价
深圳市艾宇欣科技有限公司
BGA123L4E6327XTSA1
Infineon
1931+
N/A
493
加我qq或微信，了解更多详细信息,体验一站式购物
询价
深圳市弘扬芯城科技有限公司
BGA123L4E6327
Infineon(英飞凌)
23+
DFN4(0.7x0.7)
6000
询价
深圳市振宏微科技有限公司
BGA123L4E6327
Infineon/英飞凌
23+
TSLP-4
25630
原装正品
询价
深圳市富利微电子科技有限公司
BGA123L4E6327
Infineon/英飞凌
23+
TSLP-4
30000
原装正品公司现货,假一赔十!
询价
讯运(深圳/上海)电子有限公司
BGA123L4E6327XTSA1
Infineon(英飞凌)
2021+
XFDFN-4
499
询价
深圳市华宇金电子有限公司
BGA123L4E6327
Infineon(英飞凌)
24+
TSLP-4
690000
支持实单/只做原装
询价
深圳市杰顺创科技有限公司
BGA123L4E6327
Infineon/英飞凌
21+
TSLP-4
6000
原装现货正品
询价

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