NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.

NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP)

丝印代码：R7s；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

RF Manual 16th edition

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz • High Gain ︱ S21e︱ 2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

高线性度RF 管基

NPN硅射频晶体管 • 高线性低噪声射频晶体管\n• 适用于 UHF / VHF 应用\n• 适用于线性宽带和天线放大器\n• 无铅（符合 RoHS 标准）封装;

NPN 5 GHz宽频带晶体管

Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB

NPN 5 GHz wideband transistor

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丝印代码：R7s；NPN Silicon RF Transistor

文件：523.74 Kbytes Page：9 Pages

丝印代码：R7s；Low Noise Silicon Bipolar RF Transistor

文件：622.35 Kbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：RF TRANS NPN 15V 5GHZ TO236AB 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN Silicon RF Transistor

文件：523.74 Kbytes Page：9 Pages

Low Noise Silicon Bipolar RF Transistor

文件：622.35 Kbytes Page：8 Pages

NPN 5 GHz wideband transistor

文件：58.77 Kbytes Page：8 Pages

NPN 5 GHz wideband transistor

文件：58.77 Kbytes Page：8 Pages

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

SCRs 4 AMPERES RMS 50 thru 600 VOLTS

SCRs 4 AMPERES RMS 50 thru 600 VOLTS . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Glassivated Surface for Reliabi

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)