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Silicon NPN RF Transistor

DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

Low Noise Figure

DESCRIPTION •LowNoiseFigure NF=2.5dBTYP.@VCE=8V,IC=20mA,f=900MHz •HighGain ︱S21e︱2=10.5dBTYP.@VCE=8V,IC=70mA,f=900MHz APPLICATIONS •Designedforuseinlownoise,high-gainamplifiersandlinearbroadbandamplifiers.

NPN 5 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT23envelope.Itisprimarilyintendedforlownoise,generalRFapplications.

NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)

NPNSiliconRFTransistor •Forlownoise,high-gainamplifiers •Forlinearbroadbandamplifiers •Specialapplication:antennaamplifiers •Complementarytype:BFR194(PNP)

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •HighlinearitylownoiseRFtransistor •22dBmOP1dBand31dBmOIP3@900MHz,8V,70mA •ForUHF/VHFapplications •Driverformultistageamplifiers •Forlinearbroadbandandantennaamplifiers •Collectordesignsupports5Vsupplyvoltage

NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz

NPNSiliconMicrowaveTransistorupto2GHz

NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz

NPNSiliconMicrowaveTransistorupto2GHz

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

NPN Silicon RF Transistor

NPNSiliconRFTransistor Preliminarydata •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditionto

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads •Qualificationreport

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications    Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications    Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.

isc Silicon NPN RF Transistor

DESCRIPTION ·Forlownoiseandhighgainbroadbandamplifiers atcollectorcurrentsfrom1mAto20mA. ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lownoisefigure ·Highpowergain

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHzF=1.2dBat900MHz

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz,F=0.9dBat900MHz *Shorttermdescription

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

NPN Silicon RF Transistor

Preliminarydata •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)

NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available

NPN Bipolar RF Transistor

NPNBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHzF=1.3dBat900MHz

NPN Silicon RF Transistor

NPNBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

NPN Bipolar RF Transistor

NPNBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,F=1dBat900MHz •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription

NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,F=1dBat900MHz •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlarge-signalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications   Forlow-noise,high-gainapplicationssuchaspoweramplifiersupto2GHzandf

NPN Silicon RF Transistor

NPNSiliconRFTransistor Preliminarydata •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz

Silicon NPN Planar RF Transistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages. Feature

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlarge-signalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications   Forlow-noise,high-gainapplicationssuchaspoweramplifiersupto2GHzandf

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

PNPSiliconRFTransistor •Forlowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •Complementarytype:BFR106(NPN)

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobilecommunicationssystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m •fT=7.5GHz F=1.5dBat900MHz

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobilecommunicationssystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m •fT=7.5GHz F=1.5dBat900MHz

Silicon NPN Planar RF Transistor

Features •Lowpowerapplications •Lownoisefigure •Hightransitionfrequency Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.

Silicon NPN Planar RF Transistor

Features •Lowpowerapplications •Lownoisefigure •Hightransitionfrequency Applications   Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems

NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m •fT=7.5GHz F=1.5dBat900MHz

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8m •fT=7.5GHz F=1.5dBat900MHz

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-ChannelJFETs

N-channel field-effect transistors

DESCRIPTION PlanarepitaxialsymmetricaljunctionN-channelfield-effecttransistorinaplasticSOT23package. APPLICATIONS •Lowlevelgeneralpurposeamplifiersinthickandthin-filmcircuits.

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp