Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • Low cross modulation • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     RF amplifier up to 2 GHz, especially for mobile telephone.

NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 16V(Min) · Intendedfor RF wideband amplifier applications such as satellite TV systemsand RF portable communication equipment with signal frequenciesup to 2 GHz. APPLICATIONS ·Low noise figure ·Gold metallization ensures excellen

Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • Low cross modulation • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     RF amplifier up to 2 GHz, especially for mobile telephone.