低噪声RF 管基

BFP720FESD 是硅锗碳 (SiGe:C) NPN 异质结宽带双极射频晶体管 (HBT)，具有集成 ESD 保护功能 • 高端 RF 性能与稳健性的独特组合：21 dBm 最大 RF 输入功率，2 kV HBM ESD 硬度。\n• 高增益 Gms = 22 dB（5.5 GHz、3V、15 mA）\n• 薄型小尺寸无引线封装;

Robust High Performance Low Noise Bipolar RF Transistor

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Robust Low Noise Silicon Germanium Bipolar RF Transistor

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Robust Low Noise Silicon Germanium Bipolar RF Transistor

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封装/外壳：4-SMD，扁平引线 包装：托盘 描述：RF TRANS NPN 4.7V 45GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • V

NPN high-voltage transistors

DESCRIPTION NPN transistors in a SOT223 plastic package. PNP complement: BF723. FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages of colour television receivers • General purpose high voltage circuits.

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies

Phase Control SCR (450-550 Amperes 2400 Volts)

Phase Control SCR 450-550 Amperes 2400 Volts Applications □ Power Supplies □ Battery Changers □ Motor Control □ VAR Generators

General Purpose Rectifier (600-1200 Amperes Average 4400 Volts)

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