NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

文件：154.94 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.36937 Mbytes Page：28 Pages

低噪声RF 管基

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

Product Brief The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA

Robust Low Noise Silicon Germanium Bipolar RF Transistor

Product Brief The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA.

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

文件：154.94 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.36937 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.59951 Mbytes Page：28 Pages

Robust High Performance Low Noise Bipolar RF Transistor

文件：1.88251 Mbytes Page：29 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.59951 Mbytes Page：28 Pages

低噪声RF 管基

NPN Silicon Germanium RF Transistor

文件：249.33 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.4354 Mbytes Page：28 Pages

NPN Silicon Germanium RF Transistor

文件：249.33 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.4354 Mbytes Page：28 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.5V 40GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

低噪声RF 管基

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.7V 46GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

MINIATURE FUSEHOLDERS

文件：113.57 Kbytes Page：1 Pages

Quartz Stability

文件：141.46 Kbytes Page：3 Pages

3M??Scotch짰 Transparent Film Tape 640

文件：567.23 Kbytes Page：6 Pages

PULSE TRANSFORMERS

文件：155.55 Kbytes Page：1 Pages