NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

低噪声RF 管基

• 高增益低噪声射频晶体管\n• 为各种无线应用提供出色的性能\n• 非常适合 CDMA 和 WLAN 应用\n•  1.8 GHz 时出色的噪声系数 F = 0.65 dB，6 GHz 时出色的噪声系数 F = 1.2 dB\n• 高最大稳定增益：1.8 GHz 时 Gms = 24 dB\n• 镀金处理，可靠性更高\n• 70 GHz fT-硅锗技术\n• 无铅（符合 RoHS 标准）封装;

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.36937 Mbytes Page：28 Pages

NPN Silicon Germanium RF Transistor

文件：154.94 Kbytes Page：10 Pages

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

Product Brief The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA

低噪声RF 管基

NPN硅锗射频晶体管 • 高增益低噪声射频晶体管\n• 非常适合 CDMA 和 WLAN 应用\n• 高最大稳定增益：Gms = 23 dB (1.8 GHz)\n• 70 GHz fT-硅锗技术\n• 无铅（符合 RoHS 标准）封装;

低噪声RF 管基

BFP640FESD 是硅锗碳 (SiGe:C) NPN 异质结宽带双极射频晶体管 (HBT)，采用塑料薄小扁平 4 针双发射极封装，带有可见引线。该设备配有内部保护电路，大大增强了对 ESD 和高 RF 输入功率的抵抗能力。该设备结合了坚固性、非常高的射频增益和低工作电流下的最低噪声系数，可用于广泛的无线应用。BFP640FESD 特别适合便携式电池供电应用，因为降低功耗是该类应用的关键要求。设备设计支持高达 4.1 V 的集电极电压。 • 基于英飞凌可靠、高容量 SiGe:C 晶圆技术的坚固耐用的高性能低噪声放大器\n• 最大射频输入功率高达 21 dBm\n• 1.5 GHz 时最大增益 Gms 典型值为 28.5 dB，2.4 GHz 时为 25 dB，30 mA\n• 提供精确的 SPICE GP 模型，可实现高效的在制品设计（参见第 6 章）\n• 薄、小、扁平、无铅、无卤素（符合 RoHS 标准）封装，引脚可见;

Robust Low Noise Silicon Germanium Bipolar RF Transistor

Product Brief The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA.

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

NPN Silicon Germanium RF Transistor

文件：154.94 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.36937 Mbytes Page：28 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.59951 Mbytes Page：28 Pages

Robust High Performance Low Noise Bipolar RF Transistor

文件：1.88251 Mbytes Page：29 Pages

Robust Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.59951 Mbytes Page：28 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.4354 Mbytes Page：28 Pages

NPN Silicon Germanium RF Transistor

文件：249.33 Kbytes Page：10 Pages

NPN Silicon Germanium RF Transistor

文件：249.33 Kbytes Page：10 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.4354 Mbytes Page：28 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.5V 40GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 4.7V 46GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

High Current Transistors

High Current Transistors PNP Silicon

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Ampers FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los