丝印代码：ACs；NPN Silicon Germanium RF Transistor

Low Noise SiGe:C Bipolar RF Transistor • Highly linear low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Based on Infineons reliable high volume Silicon Germanium technology • Ideal for CDMA and WLAN applications • Collector design

低噪声RF 管基

• 高线性低噪声射频晶体管\n• 为各种无线应用提供出色的性能\n• 基于英飞凌可靠的高容量 SiGe:C 技术\n• 非常适合 CDMA 和 WLAN 应用\n• 集电极设计为低压应用提供了 14.5 dBm OP1dB 的高线性度\n• 最大稳定增益：1.8 GHz 时 Gms = 21.5 dB，6 GHz 时 Gma = 11 dB\n• 出色的噪声系数 NFmin = 0.7 dB（1.8 GHz）\n• 出色的噪声系数 NFmin = 1.3 dB（6 GHz）\n• 精确的 SPICE GP 模型可实现高效的设计流程\n• 无铅（符合 RoHS 标准）封装;

丝印代码：ACs；Low Noise SiGe:C Bipolar RF Transistor

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NPN Transistor

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丝印代码：ACs；NPN Silicon Germanium RF Transistor

文件：641.59 Kbytes Page：11 Pages

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • M

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metal

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metal

低噪声RF 管基

• 高增益低噪声射频晶体管\n• 小型封装 1.4 x 0.8 x 0.59 毫米\n• 1.8 GHz 时具有出色的噪声系数 F = 0.7 dB，6 GHz 时具有出色的噪声系数 F = 1.3 dB\n• 最大稳定增益：1.8 GHz 时 Gms = 21 dB，6 GHz 时 Gma = 10 dB\n• 镀金处理，可靠性更高\n• 无铅（符合 RoHS 标准）封装;

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metal

NPN Silicon Germanium RF Transistor

文件：641.59 Kbytes Page：11 Pages

Low Noise SiGe:C Bipolar RF Transistor

文件：665.57 Kbytes Page：10 Pages

NPN Silicon Germanium RF Transistor

文件：154.82 Kbytes Page：10 Pages

Low Noise SiGe:C Bipolar RF Transistor

文件：629.26 Kbytes Page：9 Pages

NPN Silicon Germanium RF Transistor

文件：154.82 Kbytes Page：10 Pages

Low Noise SiGe:C Bipolar RF Transistor

文件：629.26 Kbytes Page：9 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 2.8V 65GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

文件：69.78 Kbytes Page：4 Pages

ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

文件：69.78 Kbytes Page：4 Pages