NPN Silicon RF Transistor (Q62702-F1721)

NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz • Gold metalization for high reliability • SIEGET® 25 - Line Siemens Grounded Emitte

NPN Silicon RF Transistor (Q62702-F1721)

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen F

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

PECL Output

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Single-Band Connectorized Monopole Antenna

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