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BFP193晶体管资料

  • BFP193别名:BFP193三极管、BFP193晶体管、BFP193晶体三极管

  • BFP193生产厂家:德国西门子AG公司

  • BFP193制作材料:Si-NPN

  • BFP193性质:表面帖装型 (SMD)_超高频/特高频 (UHF)_宽频带

  • BFP193封装形式:贴片封装

  • BFP193极限工作电压:20V

  • BFP193最大电流允许值:0.08A

  • BFP193最大工作频率:8GHZ

  • BFP193引脚数:4

  • BFP193最大耗散功率

  • BFP193放大倍数

  • BFP193图片代号:H-17

  • BFP193vtest:20

  • BFP193htest:8000000000

  • BFP193atest:0.08

  • BFP193wtest:0

  • BFP193代换 BFP193用什么型号代替:BFR194(A),BFG194(A),BFT96,2SC2671,2SC2671(H),2SC3775,2SC3778,

BFP193价格

参考价格:¥0.8295

型号:BFP193E6327 品牌:Infineon 备注:这里有BFP193多少钱,2026年最近7天走势,今日出价,今日竞价,BFP193批发/采购报价,BFP193行情走势销售排行榜,BFP193报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BFP193

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz

SIEMENS

西门子

BFP193

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

BFP193

高线性度RF 管基

NPN硅射频晶体管 • 适用于低噪声、高增益放大器,频率高达 2 GHz\n• fT = 8 GHz,NFmin = 1 dB(频率 900 MHz)\n• 无铅(符合 RoHS 标准)封装;

INFINEON

英飞凌

BFP193

Low Noise Silicon Bipolar RF Transistor

文件:549.81 Kbytes Page:6 Pages

INFINEON

英飞凌

BFP193

NPN Silicon RF Transistor

文件:78.91 Kbytes Page:7 Pages

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low noise and high gain applications such as power amplifiers up to 2 GHz and

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low noise and high gain applications such as power amplifiers up to 2 GHz and

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low noise and high gain applications such as power amplifiers up to 2 GHz and

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

INFINEON

英飞凌

高线性度RF 管基

NPN硅射频晶体管 • 适用于低噪声、高增益放大器,频率高达 2 GHz\n• fT = 8 GHz,NFmin = 1 dB(频率 900 MHz)\n• 无铅(符合 RoHS 标准)封装;

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

INFINEON

英飞凌

NPN Silicon RF Transistor

文件:78.91 Kbytes Page:7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件:549.81 Kbytes Page:6 Pages

INFINEON

英飞凌

Silicon NPN Planar RF Transistor

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:260.82 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:260.82 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:260.82 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

文件:260.82 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor

文件:82.86 Kbytes Page:7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件:82.86 Kbytes Page:7 Pages

INFINEON

英飞凌

Low Power Low Offset Voltage Dual Comparators

文件:322.34 Kbytes Page:15 Pages

NSC

国半

Low Power Low Offset Voltage Dual Comparators

文件:322.34 Kbytes Page:15 Pages

NSC

国半

Low Power Low Offset Voltage Dual Comparators

文件:322.34 Kbytes Page:15 Pages

NSC

国半

Low Power Low Offset Voltage Dual Comparators

文件:322.34 Kbytes Page:15 Pages

NSC

国半

Low Power Low Offset Voltage Dual Comparators

文件:322.34 Kbytes Page:15 Pages

NSC

国半

BFP193产品属性

  • 类型

    描述

  • ICmax:

    80 mA

  • NFmin:

    1 dB @900  MHz

  • OIP3:

    29.50 dBm @900 MHz

  • OP1dB:

    13 dBm @900 MHz

  • VCEOmax:

    12 V

  • Package:

    SOT143

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
SOT-143-4
3022
原厂订货渠道,支持BOM配单一站式服务
INFINEO
24+
SOT143
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
25+
SOT143
20300
INFINEON/英飞凌原装特价BFP193即刻询购立享优惠#长期有货
Infineon(英飞凌)
25+
SOT-143
12000
原装品质,专业护航,省心采购
INFINEON
2430+
SOT343
8540
只做原装正品假一赔十为客户做到零风险!!
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon(英飞凌)
23+
SOT-143
19850
原装正品,假一赔十
Infineon(英飞凌)
24+
N/A
9855
原装正品现货支持实单
SOT-143
23+
NA
15659
振宏微专业只做正品,假一罚百!
INFINEON
24+
SMD
5500
长期供应原装现货实单可谈

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