NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

NPN Silicon RF Transistor

文件：79.2 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：553.73 Kbytes Page：6 Pages

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

NPN Silicon RF Transistor

文件：79.2 Kbytes Page：7 Pages

Low Noise Silicon Bipolar RF Transistor

文件：553.73 Kbytes Page：6 Pages

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Unbased Lens-End Lamps

Unbased Lens-End Lamps Unbased Lamps

MINIATURE FUSES - 5x20 mm

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INSERT, THRU, REGULAR HEAD STYLE

文件：20.31 Kbytes Page：1 Pages

Combination of Thin, Flexible, Solid Cu Conductors embedded between layers of Tough

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