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BFP晶体管资料

BFP别名：BFP三极管、BFP晶体管、BFP晶体三极管
BFP生产厂家：
BFP制作材料：Si-PNP
BFP性质：低频或音频放大（LF）_功率放大（L）
BFP封装形式：贴片封装
BFP极限工作电压：20V
BFP最大电流允许值：3A
BFP最大工作频率：<1MHZ或未知
BFP引脚数：3
BFP最大耗散功率：2W
BFP放大倍数：
BFP图片代号：H-100
BFPvtest：20
BFPhtest：999900
BFPatest：3
BFPwtest：2

BFP代换 BFP用什么型号代替：2SB1308,

BFP价格

参考价格：￥0.5235

型号：BFP181E7764 品牌：Infineon 备注：这里有BFP多少钱，2025年最近7天走势，今日出价，今日竞价，BFP批发/采购报价，BFP行情走势销售排行榜，BFP报价。

型号	功能描述	生产厂家&企业
BFP136	NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) NPNSiliconRFTransistor •ForpoweramplifierinDECTandPCNsystems •fT=5.5GHz •Goldmetalizationforhighreliability	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP136	NPN Silicon RF Transistor NPNSiliconRFTransistor ●ForpoweramplifierinDECTandPCNsystems ●fT=5.5GHz ●Goldmetalizationforhighreliability	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP136W	NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) NPNSiliconRFTransistor •ForpoweramplifierinDECTandPCNsystems •fT=5.5GHz •Goldmetalizationforhighreliability	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP136W	NPN Silicon RF Transistor NPNSiliconRFTransistor ●ForpoweramplifierinDECTandPCNsystems ●fT=5.5GHz ●Goldmetalizationforhighreliability	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP180	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) NPNSiliconRFTransistor •Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz •F=2.1dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP180W	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) NPNSiliconRFTransistor •Forlow-poweramplifiersinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2to2.5mAfT=7GHz •F=2.1dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP180W	NPN Silicon RF Transistor NPNSiliconRFTransistor ●Forlow-poweramplifierinmobilecommunicationsystems(pager)atcollectorcurrentsfrom0.2mAto2.5mAfT=7GHz ●F=2.1dBat900MHz	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP181	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP181	NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP181R	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP181R	NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP181T	Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC andWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP181TRW	Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC andWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP181TW	Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC andWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP181W	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP181W	NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP182	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP182	NPN Silicon RF Transistor NPNSiliconRFTransistor* •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,F=0.9dBat900MHz •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP182R	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP182R	NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP182T	Silicon NPN Planar RF Transistor Features •Lowpowerapplications •Lownoisefigure •Hightransitionfrequency •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP182TRW	Silicon NPN Planar RF Transistor Features •Lowpowerapplications •Lownoisefigure •Hightransitionfrequency •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP182TW	Silicon NPN Planar RF Transistor Features •Lowpowerapplications •Lownoisefigure •Hightransitionfrequency •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP182W	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP182W	NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP183	NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP183R	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto28mA •fT=8GHz F=1.2dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP183R	NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto28mA •fT=8GHz F=1.2dBat900MHz	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP183T	Silicon NPN Planar RF Transistor Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP183TRW	Silicon NPN Planar RF Transistor Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP183TW	Silicon NPN Planar RF Transistor Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP183W	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP183W	NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackage withvisibleleads •QualificationreportaccordingtoAEC-Q101	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP193	NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP193	NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP193T	Silicon NPN Planar RF Transistor Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlargesignalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand	VishayVishay Siliconix 威世科技威世科技半导体
BFP193TRW	Silicon NPN Planar RF Transistor Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlargesignalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand	VishayVishay Siliconix 威世科技威世科技半导体
BFP193TW	Silicon NPN Planar RF Transistor Features •Lownoisefigure •HightransitionfrequencyfT=8GHz •Excellentlargesignalbehaviour •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainapplicationssuchaspoweramplifiersupto2GHzand	VishayVishay Siliconix 威世科技威世科技半导体
BFP193W	NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz F=1.3dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP193W	NPN Silicon RF Transistor NPNSiliconRFTransistor* •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,F=1dBat900MHz •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP193W	Low Noise Silicon Bipolar RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP193W_14	Low Noise Silicon Bipolar RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=8GHz,NFmin=1dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP194	PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) PNPSiliconRFTransistor ●Forlowdistortionbroadbandamplifierinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP196	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHzatcollectorcurrentsfrom20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP196	NPN Silicon RF Transistor NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz,F=1.3dBat900MHz •Pb-free(RoHScomp	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP196W	NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz F=1.5dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP196W	NPN Silicon RF Transistor NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA •PoweramplifierforDECTandPCNsystems •fT=7.5GHz,F=1.3dBat900MHz •Pb-free(RoHScomp	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP196W	isc Silicon NPN RF Transistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP. @VCE=6V,IC=5mA,f=1GHz •HighGain ︱S21︱2=18dBTYP. @VCE=6V,IC=30mA,f=1GHz •MinimumLot-to-Lotvariationsforrobust deviceperformanceandreliableoperation APPLICATIONS •Designedforuseinlownoise	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
BFP196WN	Low noise silicon bipolar RF transistor Productdescription •NPNsiliconplanarepitaxialtransistorin4-pindual-emitterSOT343packageforlownoiseandlowdistortionwidebandamplifiers.ThisRFtransistorbenefitsfromInfineonlong-termexperienceinRFcomponentsandcombinesease-of-usetostablevolumesproduction,atbenchm	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP22	NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPNSiliconTransistorswithHighReverseVoltage ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BFP23,BFP26(PNP)	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP25	NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPNSiliconTransistorswithHighReverseVoltage ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BFP23,BFP26(PNP)	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP280	NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA •fT=7,5GHz F=1.5dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP280T	Silicon NPN Planar RF Transistor Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP280TRW	Silicon NPN Planar RF Transistor Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP280TW	Silicon NPN Planar RF Transistor Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.2mAto8mA.	VishayVishay Siliconix 威世科技威世科技半导体
BFP280W	NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobile communicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA •fT=7,5GHz F=1.5dBat900MHz	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP360	NPN Silicon RF Transistor NPNSiliconRFTransistor Preliminarydata •Lowvoltage/lowcurrentoperation •Forlownoiseamplifiers •ForOscillatorsupto3.5GHzandPout>10dBm •Lownoisefigure:1.0dBat1.8GHz	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP360W	NPN Silicon RF Transistor NPNSiliconRFTransistor Preliminarydata •Lowvoltage/lowcurrentoperation •Forlownoiseamplifiers •ForOscillatorsupto3.5GHzandPout>10dBm •Lownoisefigure:1.0dBat1.8GHz	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
BFP405	NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) NPNSiliconRFTransistor •Forlowcurrentapplications •Foroscillatorsupto12GHz •NoisefigureF=1.15dBat1.8GHz outstandingGms=22dBat1.8GHz •TransitionfrequencyfT=25GHz •Goldmetalizationforhighreliability •SIEGET®25-Line SiemensGroundedEmitterTr	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
BFP405	NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlowcurrentapplications •Foroscillatorsupto12GHz •MinimumnoisefigureNFmin=1.25dBat1.8GHz OutstandingGms=23dBat1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackage withvisibleleads •Qualificationreportacco	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司

BFP产品属性

类型
描述
型号
BFP
制造商
Rochester Electronics LLC
制造商
Infineon Technologies AG

BFP供应商更多...

更新时间：2025-5-20 10:13:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	BFP136W	Infineon(英飞凌)	24+	标准封装	40048	原厂渠道供应,大量现货,原型号开票。	询价
中天科工半导体（深圳）有限公司	BFP136W	INFINEON	20+	SOT343	49000	原装优势主营型号-可开原型号增税票	询价
深圳市佳鑫美电子科技有限公司	BFP136W	INFIEON	24+	SOT-343	2987	绝对全新原装现货供应!	询价
深圳市拓亿芯电子有限公司	BFP136W	INFINEON	23+	SOT-343	30000	代理全新原装现货,价格优势	询价
深圳市天芯威科技有限公司	BFP136W	INFINEON	22+23+	SOT-343	8000	新到现货，只做原装进口	询价
深圳市赛能新源半导体有限公司	BFP136W	INFINEON	24+	SOT343	56000	公司进口原装现货批量特价支持	询价
深圳市富诚威科技有限公司	BFP136WE6327	INFINEON	24+	SOT343	2645	100%全新原装公司现货供应!随时可发货	询价
深圳市河锋鑫科技有限公司	BFP136W	INFINEON/英飞凌	20+	SOT343	120000	原装正品可含税交易	询价
深圳市睿芯铭科技有限公司	BFP136W	Infineon(英飞凌)	21+	SOT-343	7463	原装现货,假一罚十	询价
深圳市航润创能电子集团有限公司	BFP136WE-6327	SIEMENS	21+	SOT23	3000	原装现货假一赔十	询价