Dual NPN wideband transistor

DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and sat

RF Manual 16th edition

双NPN宽频带晶体管

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF TRANS 2 NPN 8V 9GHZ 6TSSOP 分立半导体产品 晶体管 - 双极（BJT）- 射频

Dual NPN wideband transistor

文件：71.45 Kbytes Page：10 Pages

Dual NPN wideband transistor

文件：71.45 Kbytes Page：10 Pages

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages