BFG67晶体管资料

  • BFG67别名:BFG67三极管、BFG67晶体管、BFG67晶体三极管

  • BFG67生产厂家:荷兰飞利浦公司

  • BFG67制作材料:Si-NPN

  • BFG67性质:表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频

  • BFG67封装形式:贴片封装

  • BFG67极限工作电压:20V

  • BFG67最大电流允许值:0.05A

  • BFG67最大工作频率:8GHZ

  • BFG67引脚数:3

  • BFG67最大耗散功率

  • BFG67放大倍数

  • BFG67图片代号:H-17

  • BFG67vtest:20

  • BFG67htest:8000000000

  • BFG67atest:0.05

  • BFG67wtest:0

  • BFG67代换 BFG67用什么型号代替:BFG197,

BFG67价格

参考价格:¥0.5000

型号:BFG67 品牌:NXP 备注:这里有BFG67多少钱,2025年最近7天走势,今日出价,今日竞价,BFG67批发/采购报价,BFG67行情走势销售排行榜,BFG67报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BFG67

RF Manual 16th edition

ETC

知名厂家

BFG67

NPN 8 GHz wideband transistors

DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran

Philips

飞利浦

BFG67

Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Low noise small signal amplifiers up to 2 GHz. This    transistor has superior noise figure and

VishayVishay Siliconix

威世科技威世科技半导体

BFG67

NPN 8 GHz wideband transistors

ETC

知名厂家

BFG67

Silicon NPN Planar RF Transistor

文件:103.61 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

NPN 8 GHz wideband transistors

DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran

Philips

飞利浦

NPN 8 GHz wideband transistors

ETC

知名厂家

NPN 8 GHz wideband transistors

DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran

Philips

飞利浦

NPN 8 GHz wideband transistors

ETC

知名厂家

NPN 8 GHz wideband transistors

DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran

Philips

飞利浦

NPN 8 GHz wideband transistors

ETC

知名厂家

NPN 8 GHz wideband transistors

DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran

Philips

飞利浦

NPN 8 GHz wideband transistors

ETC

知名厂家

NPN 8 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in

Philips

飞利浦

NPN 8 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in

Philips

飞利浦

NPN 8 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in

Philips

飞利浦

NPN 8 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in

Philips

飞利浦

NPN 8 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 10V 8GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 10V 8GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

Silicon NPN Planar RF Transistor

文件:103.61 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

NPN 8 GHz wideband transistors

文件:116.15 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 8 GHz wideband transistors

文件:116.15 Kbytes Page:16 Pages

JMNIC

锦美电子

BFG67产品属性

  • 类型

    描述

  • 型号

    BFG67

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Silicon NPN Planar RF Transistor

更新时间:2025-8-17 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
NA/
87000
优势代理渠道,原装正品,可全系列订货开增值税票
恩XP
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
PHI
1822+
SOT-143
6852
只做原装正品假一赔十为客户做到零风险!!
INFINEON
24+
SOT-343
9480
公司现货库存,支持实单
PHI
25+
SOT-143
20
原装正品,假一罚十!
恩XP
22+
SOT143
8000
原装正品支持实单
恩XP
24+
SOT-143SOT-23-4
6290
新进库存/原装
TE/泰科
2508+
/
129991
一级代理,原装现货
NEXPERIA/安世
25+
NA
860000
明嘉莱只做原装正品现货
恩XP
23+
N/A
6000
公司只做原装,可来电咨询

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