BFG67晶体管资料

  • BFG67别名:BFG67三极管、BFG67晶体管、BFG67晶体三极管

  • BFG67生产厂家:荷兰飞利浦公司

  • BFG67制作材料:Si-NPN

  • BFG67性质:表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频

  • BFG67封装形式:贴片封装

  • BFG67极限工作电压:20V

  • BFG67最大电流允许值:0.05A

  • BFG67最大工作频率:8GHZ

  • BFG67引脚数:3

  • BFG67最大耗散功率

  • BFG67放大倍数

  • BFG67图片代号:H-17

  • BFG67vtest:20

  • BFG67htest:8000000000

  • BFG67atest:.05

  • BFG67wtest:0

  • BFG67代换 BFG67用什么型号代替:BFG197,

BFG67价格

参考价格:¥0.5000

型号:BFG67 品牌:NXP 备注:这里有BFG67多少钱,2024年最近7天走势,今日出价,今日竞价,BFG67批发/采购报价,BFG67行情走势销售排行榜,BFG67报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BFG67

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG67

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES •Highpowergain •Lownoisefigure •Hightran

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BFG67

Silicon NPN Planar RF Transistor

Features •Smallfeedbackcapacitance •Lownoisefigure •Hightransitionfrequency •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC andWEEE2002/96/EC Applications   Lownoisesmallsignalamplifiersupto2GHz.This   transistorhassuperiornoisefigureand

VishayVishay Siliconix

威世科技

Vishay
BFG67

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES •Highpowergain •Lownoisefigure •Hightran

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BFG67

Silicon NPN Planar RF Transistor

文件:103.61 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技

Vishay

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES •Highpowergain •Lownoisefigure •Hightran

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES •Highpowergain •Lownoisefigure •Hightran

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES •Highpowergain •Lownoisefigure •Hightran

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 8 GHz wideband transistors

DESCRIPTION NPNsilicontransistorina4-pin,dual-emitterSOT143Bplasticpackage.Availablewithin-lineemitterpinning(BFG67)andcrossemitterpinning(BFG67/X).Versionwithreversepinning(BFG67/XR)alsoavailableonrequest. FEATURES •Highpowergain •Lownoisefigure •Hightran

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN 8 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343andSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintendedforwidebandapplicationsin

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 8 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343andSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintendedforwidebandapplicationsin

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 8 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343andSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintendedforwidebandapplicationsin

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 10V 8GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 10V 8GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Silicon NPN Planar RF Transistor

文件:103.61 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技

Vishay

NPN 8 GHz wideband transistors

文件:116.15 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

NPN 8 GHz wideband transistors

文件:116.15 Kbytes Page:16 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

BFG67产品属性

  • 类型

    描述

  • 型号

    BFG67

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Silicon NPN Planar RF Transistor

更新时间:2024-4-24 19:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP/恩智浦
2021/2022+
NA
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
NXP
2012+
SOT143
900000
全新原装进口自己库存优势
NXP(PHILIPS)
2020+
SOT143
985000
100%进口原装正品公司现货库存
21+
SOP8
12000
优势代理渠道,原装正品,可全系列订货开增值税票
NXP/恩智浦
23+
NA/
87000
优势代理渠道,原装正品,可全系列订货开增值税票
NXP
2022+
SOT143
7300
原装现货
PHILIPS
1822+
SOT-143
6852
只做原装正品假一赔十为客户做到零风险!!
PHILIPS/飞利浦
2022
SOT-143
80000
原装现货,OEM渠道,欢迎咨询
TEMIC
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEXPERIA/安世
22+
SOT143
600000
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