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BFG67晶体管资料
BFG67别名:BFG67三极管、BFG67晶体管、BFG67晶体三极管
BFG67生产厂家:荷兰飞利浦公司
BFG67制作材料:Si-NPN
BFG67性质:表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频
BFG67封装形式:贴片封装
BFG67极限工作电压:20V
BFG67最大电流允许值:0.05A
BFG67最大工作频率:8GHZ
BFG67引脚数:3
BFG67最大耗散功率:
BFG67放大倍数:
BFG67图片代号:H-17
BFG67vtest:20
BFG67htest:8000000000
- BFG67atest:0.05
BFG67wtest:0
BFG67代换 BFG67用什么型号代替:BFG197,
BFG67价格
参考价格:¥0.5000
型号:BFG67 品牌:NXP 备注:这里有BFG67多少钱,2025年最近7天走势,今日出价,今日竞价,BFG67批发/采购报价,BFG67行情走势销售排行榜,BFG67报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BFG67 | RF Manual 16th edition | ETC 知名厂家 | ETC | |
BFG67 | NPN 8 GHz wideband transistors DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran | Philips 飞利浦 | ||
BFG67 | Silicon NPN Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and | VishayVishay Siliconix 威世科技威世科技半导体 | ||
BFG67 | NPN 8 GHz wideband transistors | ETC 知名厂家 | ETC | |
BFG67 | Silicon NPN Planar RF Transistor 文件:103.61 Kbytes Page:4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
NPN 8 GHz wideband transistors DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran | Philips 飞利浦 | |||
NPN 8 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 8 GHz wideband transistors DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran | Philips 飞利浦 | |||
NPN 8 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 8 GHz wideband transistors DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran | Philips 飞利浦 | |||
NPN 8 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 8 GHz wideband transistors DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. FEATURES • High power gain • Low noise figure • High tran | Philips 飞利浦 | |||
NPN 8 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 8 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in | Philips 飞利浦 | |||
NPN 8 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in | Philips 飞利浦 | |||
NPN 8 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in | Philips 飞利浦 | |||
NPN 8 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in | Philips 飞利浦 | |||
NPN 8 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
封装/外壳:TO-253-4,TO-253AA 包装:托盘 描述:RF TRANS NPN 10V 8GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 10V 8GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
Silicon NPN Planar RF Transistor 文件:103.61 Kbytes Page:4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
NPN 8 GHz wideband transistors 文件:116.15 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
NPN 8 GHz wideband transistors 文件:116.15 Kbytes Page:16 Pages | JMNIC 锦美电子 |
BFG67产品属性
- 类型
描述
- 型号
BFG67
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Silicon NPN Planar RF Transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
87000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
恩XP |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
PHI |
1822+ |
SOT-143 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
24+ |
SOT-343 |
9480 |
公司现货库存,支持实单 |
|||
PHI |
25+ |
SOT-143 |
20 |
原装正品,假一罚十! |
|||
恩XP |
22+ |
SOT143 |
8000 |
原装正品支持实单 |
|||
恩XP |
24+ |
SOT-143SOT-23-4 |
6290 |
新进库存/原装 |
|||
TE/泰科 |
2508+ |
/ |
129991 |
一级代理,原装现货 |
|||
NEXPERIA/安世 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
23+ |
N/A |
6000 |
公司只做原装,可来电咨询 |
BFG67规格书下载地址
BFG67参数引脚图相关
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- BFG505X
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- BFG34
- BFG33X
- BFG33A
- BFG33
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2019-11-30
DdatasheetPDF页码索引
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