封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：MOSFET NCH DUAL GATE 12V SOT143B 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages

IC intended for use as a PWM controller

文件：30.91 Kbytes Page：6 Pages