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BF2晶体管资料
BF2别名：BF2三极管、BF2晶体管、BF2晶体三极管
BF2生产厂家：
BF2制作材料：Si-P+Darl
BF2性质：通用型 （Uni）
BF2封装形式：贴片封装
BF2极限工作电压：50V
BF2最大电流允许值：0.5A
BF2最大工作频率：<1MHZ或未知
BF2引脚数：3
BF2最大耗散功率：0.625W
BF2放大倍数：β>10000
BF2图片代号：H-100
BF2vtest：50
BF2htest：999900
- BF2atest：.5
BF2wtest：.625
BF2代换 BF2用什么型号代替：RXTB-11,
BF2价格
参考价格：￥2.1403
型号：BF2.4/RC 品牌：JKL 备注：这里有BF2多少钱，2024年最近7天走势，今日出价，今日竞价，BF2批发/采购报价，BF2行情走势销售排行榜，BF2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN TRANZYSTORY [ADVANIOERLIKON] TELEVISION/VIDEODEVICES I.F./R.F.amplifiersandoscillators V.H,F./U.H.F.TVtuningdevices | ETCList of Unclassifed Manufacturers 未分类制造商 |  |   | |
Electrical characterlitics GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
General Purpose Diodes GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Silicon N Channel MOSFET Tetrode SiliconNChannelMOSFETTetrode Targetdatasheet •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstagesupto1GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 |  | | |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) SiliconNChannelMOSFETTetrode Targetdatasheet •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstagesupto1GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
TELEVISION/VIDEO DEVICES [ADVANIOERLIKON] TELEVISION/VIDEODEVICES I.F./R.F.amplifiersandoscillators V.H,F./U.H.F.TVtuningdevices | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
Silicon N-Channel MOSFET Tetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage5V | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage5V | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage5V | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage5V | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage5V | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
RF Transistor RFTransistor NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 |  | | |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| MICRO-ELECTRONICS Micro Electronics |  | | |
AM/FM Transistor AM/FMTransistor NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 | | | |
NPN medium frequency transistor DESCRIPTION NPNmediumfrequencytransistorinaTO-92;SOT54plasticpackage. FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.40V). APPLICATIONS •AMmixers •IFamplifiersinAM/FMreceivers. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
NPN RF Transistor NPNRFTransistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●GeneralPurposeSwitchingandAmplification. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
NPN Silicon Epitaxial Planar Transistors NPNSiliconEpitaxialPlanarTransistors designedforemitter-groundedAMandFMamplifierstages Plasticcase=JEDECTO-92 TO-18compatible ThecaseisimpervioustolightWeightapproximately0.18g Dimensionsinmm | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
TRANSISTOR (NPN) FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:0.025A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | | |
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS A.M.Mixer,IFAmplifiersinAM/FMReceiverApplications | CDIL CDIL |  | | |
NPN Silicon Epitaxial Planar Transistors NPNSiliconEpitaxialPlanarTransistors designedforemitter-groundedAMandFMamplifierstages Plasticcase=JEDECTO-92 TO-18compatible ThecaseisimpervioustolightWeightapproximately0.18g Dimensionsinmm | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS A.M.Mixer,IFAmplifiersinAM/FMReceiverApplications | CDIL CDIL | | | |
N-Channel RF Amplifier ThisdeviceisdesignedforRFamplifierandmixerapplicationsoperatingupto450MHz,andforanalogswitchingrequiringlowcapacitance.SourcedfromProcess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel RF Amplifier ThisdeviceisdesignedforRFamplifierandmixerapplicationsoperatingupto450MHz,andforanalogswitchingrequiringlowcapacitance.SourcedfromProcess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
JFET VHF/UHF Amplifiers N-Channel - Depletion JFETVHF/UHFAmplifiersN–Channel—Depletion | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs | ETC1List of Unclassifed Manufacturers 未分类制造商 | | | |
N-Channel RF Amplifier ThisdeviceisdesignedforRFamplifierandmixerapplicationsoperatingupto450MHz,andforanalogswitchingrequiringlowcapacitance.SourcedfromProcess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs | ETC1List of Unclassifed Manufacturers 未分类制造商 | | | |
JFET VHF/UHF Amplifiers N-Channel - Depletion JFETVHF/UHFAmplifiersN–Channel—Depletion | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel RF Amplifier ThisdeviceisdesignedforRFamplifierandmixerapplicationsoperatingupto450MHz,andforanalogswitchingrequiringlowcapacitance.SourcedfromProcess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel RF Amplifier ThisdeviceisdesignedforRFamplifierandmixerapplicationsoperatingupto450MHz,andforanalogswitchingrequiringlowcapacitance.SourcedfromProcess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel RF Amplifier ThisdeviceisdesignedforRFamplifierandmixerapplicationsoperatingupto450MHz,andforanalogswitchingrequiringlowcapacitance.SourcedfromProcess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs | ETC1List of Unclassifed Manufacturers 未分类制造商 | | | |
N-Channel junction field-Effect Transistors N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers. | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-Channel Amplifiers N-ChannelAmplifiers •ThisdeviceisdesignedforVHF/UHFamplifiers. •Sourcedfromprocess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-CHANNEL JUNCTION FET DESCRIPTION BF245isN-ChannelJunctionFieldEffectTransistordesignedforVHF/UHFamplifiersandmixer. | MICRO-ELECTRONICS Micro Electronics | | | |
JFET VHF/UHF Amplifiers N-Channel - Depletion JFETVHF/UHFAmplifiersN–Channel—Depletion | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel junction field-Effect Transistors N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers. | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-Channel Amplifiers N-ChannelAmplifiers •ThisdeviceisdesignedforVHF/UHFamplifiers. •Sourcedfromprocess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
JFET VHF/UHF Amplifiers N-Channel - Depletion JFETVHF/UHFAmplifiersN–Channel—Depletion | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
IM-Channel Junction Field-Effect Transistors N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
N-channel silicon field-effect transistors FEATURES Interchangeabilityofdrainandsourceconnections Frequenciesupto700MHz. APPLICATIONS LF,HFandDCamplifiers. DESCRIPTION GeneralpurposeN-channelsymmetricaljunction field-effecttransistorsinaplasticTO-92variantpackage. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
N-Channel junction field-Effect Transistors N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers. | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-Channel Amplifiers N-ChannelAmplifiers •ThisdeviceisdesignedforVHF/UHFamplifiers. •Sourcedfromprocess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
JFET VHF/UHF Amplifiers N-Channel - Depletion JFETVHF/UHFAmplifiersN–Channel—Depletion | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
IM-Channel Junction Field-Effect Transistors N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
N-channel silicon field-effect transistors FEATURES Interchangeabilityofdrainandsourceconnections Frequenciesupto700MHz. APPLICATIONS LF,HFandDCamplifiers. DESCRIPTION GeneralpurposeN-channelsymmetricaljunction field-effecttransistorsinaplasticTO-92variantpackage. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-Channel junction field-Effect Transistors N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers. | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-Channel Amplifiers N-ChannelAmplifiers •ThisdeviceisdesignedforVHF/UHFamplifiers. •Sourcedfromprocess50. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
JFET VHF/UHF Amplifiers N-Channel - Depletion JFETVHF/UHFAmplifiersN–Channel—Depletion | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
IM-Channel Junction Field-Effect Transistors N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
N-channel silicon field-effect transistors FEATURES Interchangeabilityofdrainandsourceconnections Frequenciesupto700MHz. APPLICATIONS LF,HFandDCamplifiers. DESCRIPTION GeneralpurposeN-channelsymmetricaljunction field-effecttransistorsinaplasticTO-92variantpackage. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
| SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
N-channel silicon junction field-effect transistors DESCRIPTION GeneralpurposeN-channelsymmetricalsiliconjunctionfield-effecttransistorsinaplasticTO-92variantpackage. FEATURES •Interchangeabilityofdrainandsourceconnections •HighIDSSrange •Frequencyupto450MHz. APPLICATIONS •VHFandUHFamplifiers | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
| SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | |
BF2产品属性
- 类型
描述
- 型号
BF2
- 制造商
General Tools
- 功能描述
AC CIRCUIT BREAKER FINDER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CDIL |
03+ |
TO-4 |
4 |
||||
INFINEON |
专业铁帽 |
can |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT/PH/ST/SS |
2023+ |
CAN4 |
50000 |
原装现货 |
|||
PHILIPS |
23+ |
SOT-143 |
31000 |
全新原装现货 |
|||
MURATA/村田 |
2021+ |
15000 |
十年专营原装现货,假一赔十 |
||||
INFINEON/英飞凌 |
23+ |
CAN4 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
Infineon/Infineon Technologies |
21+ |
CAN4 |
960 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon |
2004 |
SOT-143 |
9000 |
||||
INF |
23+ |
SOT-343 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
INFINEON |
1742+ |
SOT143 |
98215 |
只要网上有绝对有货!只做原装正品! |
BF2芯片相关品牌
BF2规格书下载地址
BF2参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BF245
- BF244C
- BF244B
- BF244A
- BF241
- BF240
- BF231M
- BF224
- BF223
- BF222
- BF221
- BF220
- BF219
- BF218
- BF217
- BF216
- BF215
- BF214
- BF213
- BF212
- BF209
- BF208
- BF207
- BF206
- BF2040W
- BF2040R
- BF2040
- BF2030W
- BF2030R
- BF2030
- BF203
- BF202
- BF200B
- BF2000W
- BF2000
- BF200
- BF199
- BF198
- BF197
- BF196
- BF195
- BF194
- BF193W
- BF18-F
- BF189
- BF188
- BF187
- BF186
- BF185
- BF184
- BF183
- BF182
- BF181
- BF180
- BF179C
- BF179B
- BF179A
- BF179
- BF178
- BF173
- BF167
- BF151M
BF2数据表相关新闻
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2020-6-9
DdatasheetPDF页码索引
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