HIGH CURRENT NPN SILICON TRANSISTOR

DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial equipment. ■ SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

isc Silicon NPN Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 30-120@IC= 5A • Excellent Safe Operating Area • High Current Capability APPLICATIONS • Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters.

Silicon NPN Power Transistor

DESCRIPTION • High DC Current Gain- : hFE=30-120@lc=5A • Excellent Safe Operating Area • High Current Capability APPLICATIONS • Designed for use in switching-control amplifiers, power gates,sw tching regulators, converters, and inverters.

PRO-ELECTRON POWER TRANSISTORS

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Bipolar NPN Device in a Hermetically sealed TO3

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isc Silicon NPN Power Transistor

DESCRIPTION • High Current Capability • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) • High Switching Speed APPLICATIONS • Designed for use in converters, inverters, switching regulators and switching control amplifiers.

Bipolar NPN Device in a Hermetically sealed TO3

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