COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP types is the BDX88C. ■ SGS-THOMSON PREFER

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type BDX88C • DARLINGTON APPLICATIONS • Designed for use in power linear and switching application.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 750(Min)@ IC= 6A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C • Complement to Type BDX88/A/B/C APPLICATIONS • Designed for use in power linear and switching applications.

Silicon NPN Power Transistors

DESCRIPTION • High DC Current Gain- : hFE= 750(Min)@ IC= 6A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C • Complement to Type BDX88/A/B/C APPLICATIONS • Designed for use in power linear and switching applications.

Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 750(Min)@ IC= 6A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C • Complement to Type BDX88/A/B/C APPLICATIONS • Designed for use in power linear and switching applications.

Bipolar NPN Device

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Silicon NPN Power Transistors

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