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BDX63晶体管资料
BDX63别名：BDX63三极管、BDX63晶体管、BDX63晶体三极管
BDX63生产厂家：荷兰飞利浦公司_RTC_德国凡尔伏公司
BDX63制作材料：Si-N+Darl+Di
BDX63性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
BDX63封装形式：直插封装
BDX63极限工作电压：80V
BDX63最大电流允许值：8A
BDX63最大工作频率：7MHZ
BDX63引脚数：2
BDX63最大耗散功率：90W
BDX63放大倍数：β>1000
BDX63图片代号：E-44
BDX63vtest：80
BDX63htest：7000000
- BDX63atest：8
BDX63wtest：90
BDX63代换 BDX63用什么型号代替：BDX65,BDX83A,BDX85A,FH8C,MJ1000,MJ3000,TIP140,TIP640,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDX63 | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. | SEME-LAB Seme LAB |   | |
BDX63 | NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. | COMSET | | |
BDX63 | isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | |
BDX63 | Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDX63 | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | |
BDX63 | NPN SILICON DARLINGTON POWER TRANSISTOR 文件：83.64 Kbytes Page：4 Pages | COMSET | | |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. | SEME-LAB Seme LAB | | ||
NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. | COMSET | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | ||
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. | SEME-LAB Seme LAB | | ||
NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. | COMSET | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | ||
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. | SEME-LAB Seme LAB | | ||
NPN SILICON DARLINGTONS NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. | COMSET | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -IC= 8A • High DC Current Gain-hFE= 1000(Min)@ IC= 3A • Complement to Type BDX62/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | ||
NPN SILICON DARLINGTON POWER TRANSISTOR 文件：83.64 Kbytes Page：4 Pages | COMSET | | ||
NPN SILICON DARLINGTON POWER TRANSISTOR 文件：83.64 Kbytes Page：4 Pages | COMSET | | ||
NPN SILICON DARLINGTON POWER TRANSISTOR 文件：83.64 Kbytes Page：4 Pages | COMSET | | ||
NPN SILICON DARLINGTON POWER TRANSISTOR 文件：83.64 Kbytes Page：4 Pages | COMSET | |
BDX63产品属性
- 类型
描述
- 型号
BDX63
- 制造商
ISC
- 制造商全称
Inchange Semiconductor Company Limited
- 功能描述
isc Silicon NPN Darlington Power Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
1024+ |
TO-3 |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
PHI |
2023+ |
TO-3 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
PHI |
21+ |
TO-3 |
200 |
原装现货假一赔十 |
|||
24+ |
TO-3 |
10000 |
全新 |
||||
PHI |
专业铁帽 |
TO-3 |
200 |
原装铁帽专营,代理渠道量大可订货 |
|||
DIODES/美台 |
24+ |
SOT-323 |
9000 |
公司现货库存,支持实单 |
|||
ph |
24+ |
500000 |
行业低价,代理渠道 |
||||
ON/安森美 |
25+ |
TO-3 |
77 |
原装正品,假一罚十! |
|||
ST |
2511 |
TO-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST/MOTO |
23+ |
TO-3 |
88951 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
BDX63规格书下载地址
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2012-11-10
DdatasheetPDF页码索引
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