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BDX54晶体管资料
BDX54别名：BDX54三极管、BDX54晶体管、BDX54晶体三极管
BDX54生产厂家：德国电子元件股份公司
BDX54制作材料：Si-P+Darl+Di
BDX54性质：低频或音频放大 （LF）_功率放大 （L）
BDX54封装形式：直插封装
BDX54极限工作电压：45V
BDX54最大电流允许值：8A
BDX54最大工作频率：20MHZ
BDX54引脚数：3
BDX54最大耗散功率：60W
BDX54放大倍数：β>750
BDX54图片代号：B-10
BDX54vtest：45
BDX54htest：20000000
- BDX54atest：8
BDX54wtest：60
BDX54代换 BDX54用什么型号代替：BD266L,
BDX54价格
参考价格：￥20.8652
型号：BDX54 品牌：Florida Misc. 备注：这里有BDX54多少钱，2025年最近7天走势，今日出价，今日竞价，BDX54批发/采购报价，BDX54行情走势销售排行榜，BDX54报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDX54 | POWER TRANSISTORS(8A.,45-100V,60W) 8 Ampere Darington Coplemenetary Silicon Power Transistors 45-100 Volts 60Watts | MOSPEC 统懋 |   | |
BDX54 | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | | |
BDX54 | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | TRSYS Transys Electronics | | |
BDX54 | Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BDX54 | NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | TEL 东电电子 | | |
BDX54 | Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | SAVANTIC | | |
BDX54 | Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | ISC 无锡固电 | | |
BDX54 | BASE NPN / PNP EPITAXIAL BASE NPN / PNP POWER DARLINGTONS | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
BDX54 | NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | CDIL | | |
BDX54 | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS 文件：93.91 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDX54 | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS 文件：93.3 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDX54 | PNP SILICON POWER DARLINGTONS 文件：115.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
POWER TRANSISTORS(8A.,45-100V,60W) 8 Ampere Darington Coplemenetary Silicon Power Transistors 45-100 Volts 60Watts | MOSPEC 统懋 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | TRSYS Transys Electronics | | ||
Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | TEL 东电电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | ISC 无锡固电 | | ||
BASE NPN / PNP EPITAXIAL BASE NPN / PNP POWER DARLINGTONS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | CDIL | | ||
POWER TRANSISTORS(8A.,45-100V,60W) 8 Ampere Darington Coplemenetary Silicon Power Transistors 45-100 Volts 60Watts | MOSPEC 统懋 | | ||
Plastic Medium-Power Complementary Silicon Transistors BDX53B,BDX53C --> NPN BDX54B,BDX54C --> PNP DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80–100 VOLTS 65 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector | Motorola 摩托罗拉 | | ||
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS Plastic Medium−Power Complementary Silicon Transistors BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS These devices are designed for general−purpose amplifier and low−speed switching application | ONSEMI 安森美半导体 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Au | STMICROELECTRONICS 意法半导体 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | TRSYS Transys Electronics | | ||
Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | TEL 东电电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | SAVANTIC | | ||
BASE NPN / PNP EPITAXIAL BASE NPN / PNP POWER DARLINGTONS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | CDIL | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | ISC 无锡固电 | | ||
BASE NPN / PNP EPITAXIAL BASE NPN / PNP POWER DARLINGTONS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS Plastic Medium−Power Complementary Silicon Transistors BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS These devices are designed for general−purpose amplifier and low−speed switching application | ONSEMI 安森美半导体 | | ||
NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | TEL 东电电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | SAVANTIC | | ||
POWER TRANSISTORS(8A.,45-100V,60W) 8 Ampere Darington Coplemenetary Silicon Power Transistors 45-100 Volts 60Watts | MOSPEC 统懋 | | ||
Plastic Medium-Power Complementary Silicon Transistors BDX53B,BDX53C --> NPN BDX54B,BDX54C --> PNP DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80–100 VOLTS 65 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector | Motorola 摩托罗拉 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | POINN Power Innovations Ltd | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Au | STMICROELECTRONICS 意法半导体 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | TRSYS Transys Electronics | | ||
Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers | ISC 无锡固电 | | ||
Complementary Silicon Power Darlington Ttransistors DESCRIPTION The BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP t | TGS | | ||
NPN PLASTIC POWER TRANSISTORS BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications | CDIL | | ||
SILICON PNP POWER DARLINGTON TRANSISTOR DESCRIPTION The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F. ■ STMicroelectronics PREFERRED SALESTY | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F. ■ STMicroelectronics PREFERRED SALESTY | STMICROELECTRONICS 意法半导体 | | ||
Complementary Silicon Power Darlington Ttransistors DESCRIPTION The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP t | TGS | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -8A • High DC Current Gain- : hFE= 500(Min)@ IC= -2A • Complement to Type BDX53F APPLICATIONS • Designed for use in power linear and switching applications. | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -8A • High DC Current Gain- : hFE= 500(Min)@ IC= -2A • Complement to Type BDX53F APPLICATIONS • Designed for use in power linear and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS 文件：93.91 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PNP SILICON POWER DARLINGTONS 文件：115.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS PNP DARL 60V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS 文件：93.3 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS 文件：93.91 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Plastic Medium-Power Complementary Silicon Transistors 文件：106.09 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary power Darlington transistors 文件：86.52 Kbytes Page：7 Pages | STMICROELECTRONICS 意法半导体 | | ||
PNP SILICON POWER DARLINGTONS 文件：115.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | |
BDX54产品属性
- 类型
描述
- 型号
BDX54
- 功能描述
达林顿晶体管 60W 8A PNP
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
5099 |
原装现货,当天可交货,原型号开票 |
|||
SEC |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
ST/意法 |
24+ |
TO-2-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
13+ |
143 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||||
F |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
ON(安森美) |
23+ |
18294 |
公司只做原装正品,假一赔十 |
||||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FAIRCHILD/仙童 |
25+ |
TO-220220F |
45000 |
FAIRCHILD/仙童全新现货BDX54C/F/A/B即刻询购立享优惠#长期有排单订 |
BDX54规格书下载地址
BDX54参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDX65A
- BDX65
- BDX64C
- BDX64B
- BDX64A
- BDX64
- BDX63L
- BDX63C
- BDX63B
- BDX63A
- BDX63
- BDX62L
- BDX62C
- BDX62B
- BDX62A
- BDX62
- BDX61(-4...-7)
- BDX60(-4...-7)
- BDX54S
- BDX54H
- BDX54F
- BDX54E
- BDX54CG
- BDX54C
- BDX54BG
- BDX54BFI
- BDX54B
- BDX54A
- BDX53S
- BDX53H
- BDX53F
- BDX53E
- BDX53CG
- BDX53C
- BDX53BG
- BDX53BFP
- BDX53BFI
- BDX53B
- BDX53A
- BDX53
- BDX51
- BDX50(-4...-7)
- BDX47
- BDX46
- BDX45
- BDX44
- BDX43
- BDX42
- BDX41(-4...-7)
- BDX40(-4...-7)
- BDX37
- BDX36
- BDX35
- BDX34D
- BDX34CG
- BDX34C
- BDX34BG
BDX54数据表相关新闻
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进口代理
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BE-A301
2022-3-15BF7612CM28，40k现货，批次21+
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2021-11-10BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
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2020-6-9BD9328EFJ-降压型开关稳压器
BD9328EFJ：降压型开关稳压器 ●简介 BD9328EFJ是一个同步降压开关稳压器，集成了2低电阻N沟道MOSFET。 较宽广的输入电压范围内达到2A的连续输出电流。 电流模式能提供快速瞬态响应和容易的相位补偿。 ●特点 1）宽输入范围4.2V〜18.0V 2）2A输出电流 3）高侧/低侧FET导通电阻;0.15/0.13Ω电源开关 4）低ESR输出陶瓷电容器 5）低待机电流在关断模式 6）380 kHz的固定经营频
2012-11-10
DdatasheetPDF页码索引
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