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BDW84晶体管资料
BDW84别名：BDW84三极管、BDW84晶体管、BDW84晶体三极管
BDW84生产厂家：美国得克萨斯仪表公司
BDW84制作材料：Si-P+Darl+Di
BDW84性质：低频或音频放大 （LF）_功率放大 （L）
BDW84封装形式：直插封装
BDW84极限工作电压：45V
BDW84最大电流允许值：15A
BDW84最大工作频率：>1MHZ
BDW84引脚数：3
BDW84最大耗散功率：150W
BDW84放大倍数：β>750
BDW84图片代号：B-62
BDW84vtest：45
BDW84htest：1000100
- BDW84atest：15
BDW84wtest：150
BDW84代换 BDW84用什么型号代替：BDV64,BDV66,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDW84 | PNP SILICON POWER DARLINGTONS PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. ● Designed for Complementary Use with BDW | POINN Power Innovations Ltd |   | |
BDW84 | Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW83/83A/83B/83C/83D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | |
BDW84 | Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. | ISC 无锡固电 | | |
BDW84 | PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-3PN plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compli | COMSET | | |
BDW84 | Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -15A • High DC Current Gain-hFE= 750(Min)@ lc= -6A • Complement to Type BDW83/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDW84 | Silicon PNP Power Transistors 文件：149.63 Kbytes Page：3 Pages | SAVANTIC | | |
BDW84 | PNP SILICON POWER DARLINGTONS 文件：121.99 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
PNP SILICON POWER DARLINGTONS PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. ● Designed for Complementary Use with BDW | POINN Power Innovations Ltd | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW83/83A/83B/83C/83D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-3PN plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compli | COMSET | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -15A • High DC Current Gain-hFE= 750(Min)@ lc= -6A • Complement to Type BDW83/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PNP SILICON POWER DARLINGTONS PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. ● Designed for Complementary Use with BDW | POINN Power Innovations Ltd | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-3PN plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compli | COMSET | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -15A • High DC Current Gain-hFE= 750(Min)@ lc= -6A • Complement to Type BDW83/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW83/83A/83B/83C/83D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDW83C is a Silicon Epitaxial-Base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary type is BDW84C. ■ BDW83C IS A STMicroelectronics PREFERRED SALESTYPE ■ COM | STMICROELECTRONICS 意法半导体 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW83/83A/83B/83C/83D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. | ISC 无锡固电 | | ||
PNP SILICON POWER DARLINGTONS PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. ● Designed for Complementary Use with BDW | POINN Power Innovations Ltd | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-3PN plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compli | COMSET | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-3PN plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compli | COMSET | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -15A • High DC Current Gain-hFE= 750(Min)@ lc= -6A • Complement to Type BDW83/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PNP SILICON POWER DARLINGTONS PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. ● Designed for Complementary Use with BDW | POINN Power Innovations Ltd | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW83/83A/83B/83C/83D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. | ISC 无锡固电 | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-3PN plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compli | COMSET | | ||
Silicon PNP Power Transistors 文件：149.63 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar PNP Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
PNP SILICON POWER DARLINGTONS 文件：121.99 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP DARL 60V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 80V 15A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Central | | ||
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 文件：11.29 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
Silicon PNP Power Transistors 文件：149.63 Kbytes Page：3 Pages | SAVANTIC | | ||
PNP SILICON POWER DARLINGTONS 文件：121.99 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Silicon PNP Power Transistors 文件：149.63 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar PNP Device in a Hermetically sealed TO3 文件：16.329 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
PNP SILICON POWER DARLINGTONS 文件：121.99 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：49.9 Kbytes Page：4 Pages | STMICROELECTRONICS 意法半导体 | | ||
PNP SILICON POWER DARLINGTONS 文件：121.99 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Silicon PNP Darlington Power Transistor 文件：137.13 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Bipolar PNP Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
Silicon PNP Power Transistors 文件：149.63 Kbytes Page：3 Pages | SAVANTIC | |
BDW84产品属性
- 类型
描述
- 型号
BDW84
- 功能描述
达林顿晶体管 150W 15A PNP
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOURNS/伯恩斯 |
24+ |
NA/ |
3486 |
原装现货,当天可交货,原型号开票 |
|||
DIODES/美台 |
24+ |
SOT-363 |
9000 |
公司现货库存,支持实单 |
|||
TI/德州仪器 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
TI/ |
22+23+ |
TO-218 |
8000 |
新到现货，只做原装进口 |
|||
BOURNS/伯恩斯 |
25+ |
TO3P |
8000 |
原装正品,假一罚十! |
|||
PH |
1932+ |
TO-218 |
723 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法 |
25+ |
TO-218 |
45000 |
ST/意法全新现货BDW84C即刻询购立享优惠#长期有排单订 |
|||
ST |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
SI |
23+ |
TO-218 |
85000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
BDW84芯片相关品牌
BDW84规格书下载地址
BDW84参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDX14A
- BDX14
- BDX13
- BDX12
- BDX11(-4...-7)
- BDX11
- BDX10
- BDW94CFP
- BDW94CFI
- BDW94CF
- BDW94C
- BDW94B
- BDW94A
- BDW94
- BDW93CFP
- BDW93CFI
- BDW93CF
- BDW93C
- BDW93B
- BDW93A
- BDW93
- BDW92
- BDW91
- BDW84D
- BDW84C
- BDW84B
- BDW84A
- BDW83D
- BDW83C
- BDW83B
- BDW83A
- BDW83
- BDW74D
- BDW74C
- BDW74B
- BDW74A
- BDW74
- BDW73D
- BDW73C
- BDW73B
- BDW73A
- BDW73
- BDW64D
- BDW64C
- BDW64B
- BDW64A
- BDW64
BDW84数据表相关新闻
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BE-A301
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BF7612CM28，BYD，40K，21+
2021-11-10BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
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2020-6-9BD9328EFJ-降压型开关稳压器
BD9328EFJ：降压型开关稳压器 ●简介 BD9328EFJ是一个同步降压开关稳压器，集成了2低电阻N沟道MOSFET。 较宽广的输入电压范围内达到2A的连续输出电流。 电流模式能提供快速瞬态响应和容易的相位补偿。 ●特点 1）宽输入范围4.2V〜18.0V 2）2A输出电流 3）高侧/低侧FET导通电阻;0.15/0.13Ω电源开关 4）低ESR输出陶瓷电容器 5）低待机电流在关断模式 6）380 kHz的固定经营频
2012-11-10
DdatasheetPDF页码索引
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