BDV65晶体管资料

  • BDV65别名:BDV65三极管、BDV65晶体管、BDV65晶体三极管

  • BDV65生产厂家:德国凡尔伏公司

  • BDV65制作材料:Si-N+Darl+Di

  • BDV65性质:低频或音频放大 (LF)_功率放大 (L)

  • BDV65封装形式:直插封装

  • BDV65极限工作电压:60V

  • BDV65最大电流允许值:12A

  • BDV65最大工作频率:<1MHZ或未知

  • BDV65引脚数:3

  • BDV65最大耗散功率:125W

  • BDV65放大倍数:β>1000

  • BDV65图片代号:B-62

  • BDV65vtest:60

  • BDV65htest:999900

  • BDV65atest:12

  • BDV65wtest:125

  • BDV65代换 BDV65用什么型号代替:BDV67,BDW83A,FH9C,

BDV65价格

参考价格:¥5.6407

型号:BDV65BG 品牌:ONSemi 备注:这里有BDV65多少钱,2024年最近7天走势,今日出价,今日竞价,BDV65批发/采购报价,BDV65行情走势销售排行榜,BDV65报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BDV65

POWER TRANSISTORS(12A,125W)

MOSPEC

MOSPEC

MOSPEC
BDV65

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
BDV65

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV65

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BDV65

NPN SILICON POWER DARLINGTONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BDV65

NNP SILICON DARLINGTONS POWER TRANSISTORS

NNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV64-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
BDV65

Silicon NPN Power Transistors

文件:138.94 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV65

NPN SILICON POWER DARLINGTONS

文件:108.85 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns
BDV65

封装/外壳:TO-218-3 包装:散装 描述:TRANS NPN 60V 12A TO218 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWER TRANSISTORS(12A,125W)

MOSPEC

MOSPEC

MOSPEC

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

NNP SILICON DARLINGTONS POWER TRANSISTORS

NNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV64-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET

NPN SILICON POWER DARLINGTONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWER TRANSISTORS(12A,125W)

MOSPEC

MOSPEC

MOSPEC

Complementary Silicon Plastic Power Darlingtons

ComplementarySiliconPlasticPowerDarlingtons ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain HFE=1000(min)@5Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistors

MotorolaMotorola, Inc

摩托罗拉

Motorola

DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

ComplementarySiliconPlasticPowerDarlingtons ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−HFE=1000(min)@5Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistors •ThesearePb−FreeDevices*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

NPN SILICON POWER DARLINGTONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NNP SILICON DARLINGTONS POWER TRANSISTORS

NNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV64-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBDV64/64A/64B/64C •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseingeneralpurposeamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPN SILICON POWER DARLINGTONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NNP SILICON DARLINGTONS POWER TRANSISTORS

NNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV64-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET

Silicon NPN Power Transistors

文件:138.94 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

NPN SILICON POWER DARLINGTONS

文件:108.85 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

封装/外壳:TO-218-3 包装:卷带(TR) 描述:TRANS NPN DARL 80V 12A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

BournsBourns Inc.

伯恩斯(邦士)

Bourns

Complementary Silicon Plastic Power Darlingtons

文件:116.09 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Plastic Power Darlingtons

文件:112.12 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

文件:108.85 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

Complementary Silicon Plastic Power Darlingtons

文件:118.12 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Silicon NPN Power Transistors

文件:138.94 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Complementary Silicon Plastic Power Darlingtons

文件:116.09 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Plastic Power Darlingtons

文件:112.12 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Plastic Power Darlingtons

文件:118.12 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Plastic Power Darlingtons

文件:112.12 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Plastic Power Darlingtons

文件:118.12 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

文件:108.85 Kbytes Page:5 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

Silicon NPN Power Transistors

文件:138.94 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

BDV65产品属性

  • 类型

    描述

  • 型号

    BDV65

  • 功能描述

    达林顿晶体管 125W 12A NPN

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-4-19 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
NA/
5518
原装现货,当天可交货,原型号开票
ON/安森美
22+
TO-247
6000
只做原装,假一赔十
MOT
98+
TO-3P
3
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
21+
TO-247
8080
公司只做原装,诚信经营
onsemi(安森美)
21+
TO-247
10000
只做原装 假一赔万
ST/PH
1738+
TO-3P
8529
科恒伟业!只做原装正品,假一赔十!
三年内
1983
纳立只做原装正品13590203865
ON Semiconductor
2010+
N/A
459
加我qq或微信,了解更多详细信息,体验一站式购物
ST
23+
TO-247
3000
全新原装
ST
17+
TO-3P
15000
原装现货热卖

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  • ALSC
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  • WEIDMULLER
  • YFWDIODE

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