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BDV65晶体管资料
BDV65别名：BDV65三极管、BDV65晶体管、BDV65晶体三极管
BDV65生产厂家：德国凡尔伏公司
BDV65制作材料：Si-N+Darl+Di
BDV65性质：低频或音频放大 （LF）_功率放大 （L）
BDV65封装形式：直插封装
BDV65极限工作电压：60V
BDV65最大电流允许值：12A
BDV65最大工作频率：<1MHZ或未知
BDV65引脚数：3
BDV65最大耗散功率：125W
BDV65放大倍数：β>1000
BDV65图片代号：B-62
BDV65vtest：60
BDV65htest：999900
- BDV65atest：12
BDV65wtest：125
BDV65代换 BDV65用什么型号代替：BDV67,BDW83A,FH9C,
BDV65价格
参考价格：￥5.6407
型号：BDV65BG 品牌：ONSemi 备注：这里有BDV65多少钱，2025年最近7天走势，今日出价，今日竞价，BDV65批发/采购报价，BDV65行情走势销售排行榜，BDV65报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDV65 | POWER TRANSISTORS(12A,125W)
| MOSPEC 统懋 |   | |
BDV65 | NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | |
BDV65 | Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | SAVANTIC | | |
BDV65 | Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | ISC 无锡固电 | | |
BDV65 | NPN SILICON POWER DARLINGTONS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDV65 | NNP SILICON DARLINGTONS POWER TRANSISTORS NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS. | COMSET | | |
BDV65 | Silicon NPN Power Transistors 文件：138.94 Kbytes Page：3 Pages | SAVANTIC | | |
BDV65 | NPN SILICON POWER DARLINGTONS 文件：108.85 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
BDV65 | 封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 60V 12A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Central | | |
POWER TRANSISTORS(12A,125W)
| MOSPEC 统懋 | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | SAVANTIC | | ||
NNP SILICON DARLINGTONS POWER TRANSISTORS NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS. | COMSET | | ||
NPN SILICON POWER DARLINGTONS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
POWER TRANSISTORS(12A,125W)
| MOSPEC 统懋 | | ||
Complementary Silicon Plastic Power Darlingtons Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors | Motorola 摩托罗拉 | | ||
DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors • These are Pb−Free Devices* | ONSEMI 安森美半导体 | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | ||
NPN SILICON POWER DARLINGTONS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NNP SILICON DARLINGTONS POWER TRANSISTORS NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS. | COMSET | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | SAVANTIC | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDV64/64A/64B/64C • DARLINGTON • High DC current gain APPLICATIONS • For use in general purpose amplifier applications. | ISC 无锡固电 | | ||
NPN SILICON POWER DARLINGTONS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NNP SILICON DARLINGTONS POWER TRANSISTORS NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS. | COMSET | | ||
Silicon NPN Power Transistors 文件：138.94 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN SILICON POWER DARLINGTONS 文件：108.85 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：卷带（TR） 描述：TRANS NPN DARL 80V 12A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Complementary Silicon Plastic Power Darlingtons 文件：116.09 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：112.12 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
NPN SILICON POWER DARLINGTONS 文件：108.85 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：118.12 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：138.94 Kbytes Page：3 Pages | SAVANTIC | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：116.09 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：112.12 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：118.12 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：112.12 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：118.12 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
NPN SILICON POWER DARLINGTONS 文件：108.85 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Silicon NPN Power Transistors 文件：138.94 Kbytes Page：3 Pages | SAVANTIC | |
BDV65产品属性
- 类型
描述
- 型号
BDV65
- 功能描述
达林顿晶体管 125W 12A NPN
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
24+ |
NA/ |
5518 |
原装现货,当天可交货,原型号开票 |
|||
ST/意法 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON/安森美 |
25+ |
TO-218 |
55 |
原装正品,假一罚十! |
|||
pi |
24+ |
500000 |
行业低价,代理渠道 |
||||
MOT |
98+ |
TO-3P |
3 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
25+ |
TO-218 |
45000 |
ST/意法全新现货BDV65C即刻询购立享优惠#长期有排单订 |
|||
ST/PH |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ON |
2025+ |
TO-218-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ST |
24+ |
TO-3P |
8500 |
只做原装正品现货 欢迎来电查询15919825718 |
BDV65芯片相关品牌
BDV65规格书下载地址
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2012-11-10
DdatasheetPDF页码索引
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