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BDV64晶体管资料
BDV64别名：BDV64三极管、BDV64晶体管、BDV64晶体三极管
BDV64生产厂家：德国凡尔伏公司
BDV64制作材料：Si-P+Darl+Di
BDV64性质：低频或音频放大 （LF）_功率放大 （L）
BDV64封装形式：直插封装
BDV64极限工作电压：60V
BDV64最大电流允许值：12A
BDV64最大工作频率：<1MHZ或未知
BDV64引脚数：3
BDV64最大耗散功率：125W
BDV64放大倍数：β>1000
BDV64图片代号：B-62
BDV64vtest：60
BDV64htest：999900
- BDV64atest：12
BDV64wtest：125
BDV64代换 BDV64用什么型号代替：BDV66,BDW84A,
BDV64价格
参考价格：￥5.2161
型号：BDV64BG 品牌：ONSemi 备注：这里有BDV64多少钱，2025年最近7天走势，今日出价，今日竞价，BDV64批发/采购报价，BDV64行情走势销售排行榜，BDV64报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDV64 | POWER TRANSISTORS(12A,125W)
| MOSPEC 统懋 |   | |
BDV64 | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | |
BDV64 | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25 °C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A | TRSYS Transys Electronics | | |
BDV64 | Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. | SAVANTIC | | |
BDV64 | isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | |
BDV64 | PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS. | COMSET | | |
BDV64 | Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -12A • Collector-Emitter Saturation Voltage- : VCE(sat)=-2.0V(Max.)@ lc= -5A • Complement to Type BDV65/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDV64 | PNP SILICON POWER DARLINGTONS 文件：110.73 Kbytes Page：4 Pages | Bourns 伯恩斯 | | |
BDV64 | Silicon PNP Power Transistors 文件：139.15 Kbytes Page：3 Pages | SAVANTIC | | |
BDV64 | PNP SILICON POWER DARLINGTONS 文件：109.72 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
BDV64 | 封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 60V 12A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Central | | |
POWER TRANSISTORS(12A,125W)
| MOSPEC 统懋 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25 °C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A | TRSYS Transys Electronics | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS. | COMSET | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -12A • Collector-Emitter Saturation Voltage- : VCE(sat)=-2.0V(Max.)@ lc= -5A • Complement to Type BDV65/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
POWER TRANSISTORS(12A,125W)
| MOSPEC 统懋 | | ||
DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors • These are Pb−Free Devices* | ONSEMI 安森美半导体 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | ||
Complementary Silicon Plastic Power Darlingtons Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors | Motorola 摩托罗拉 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25 °C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A | TRSYS Transys Electronics | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS. | COMSET | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -12A • Collector-Emitter Saturation Voltage- : VCE(sat)=-2.0V(Max.)@ lc= -5A • Complement to Type BDV65/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN Power Innovations Ltd | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25 °C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A | TRSYS Transys Electronics | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -lc= -12A • Collector-Emitter Saturation Voltage- : VCE(sat)=-2.0V(Max.)@ lc= -5A • Complement to Type BDV65/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications | ISC 无锡固电 | | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS. | COMSET | | ||
PNP SILICON POWER DARLINGTONS 文件：110.73 Kbytes Page：4 Pages | Bourns 伯恩斯 | | ||
Silicon PNP Power Transistors 文件：139.15 Kbytes Page：3 Pages | SAVANTIC | | ||
PNP SILICON POWER DARLINGTONS 文件：109.72 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP DARL 60V 12A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Silicon PNP Power Transistors 文件：139.15 Kbytes Page：3 Pages | SAVANTIC | | ||
PNP SILICON POWER DARLINGTONS 文件：110.73 Kbytes Page：4 Pages | Bourns 伯恩斯 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：118.12 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
PNP SILICON POWER DARLINGTONS 文件：109.72 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：112.12 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：116.09 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：112.12 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Darlingtons 文件：118.12 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
PNP SILICON POWER DARLINGTONS 文件：109.72 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Silicon PNP Power Transistors 文件：139.15 Kbytes Page：3 Pages | SAVANTIC | | ||
PNP SILICON POWER DARLINGTONS 文件：110.73 Kbytes Page：4 Pages | Bourns 伯恩斯 | | ||
PNP SILICON POWER DARLINGTONS 文件：110.73 Kbytes Page：4 Pages | Bourns 伯恩斯 | |
BDV64产品属性
- 类型
描述
- 型号
BDV64
- 功能描述
达林顿晶体管 125W 12A PNP
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
PHI |
24+ |
NA/ |
105 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
25+ |
TO-218 |
12 |
原装正品,假一罚十! |
|||
ST |
24+ |
TO-3P |
15000 |
原装现货热卖 |
|||
ST/PH |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ON |
25+ |
TO218PBFREE |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
ON |
24+ |
TO-247 |
25000 |
ON全系列可订货 |
|||
TI |
23+ |
TO-3P |
8500 |
专做原装正品,假一罚百! |
|||
POWERINNOV |
24+/25+ |
10 |
原装正品现货库存价优 |
||||
onsemi |
两年内 |
NA |
105 |
实单价格可谈 |
BDV64芯片相关品牌
BDV64规格书下载地址
BDV64参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
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- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDV91
- BDV67D
- BDV67C
- BDV67B
- BDV67A
- BDV67
- BDV66C
- BDV66BF
- BDV66B
- BDV66AF
- BDV66A
- BDV66
- BDV65F
- BDV65CF
- BDV65C
- BDV65BG
- BDV65BF
- BDV65B
- BDV65AF
- BDV65A
- BDV65
- BDV64-S
- BDV64F
- BDV64CF
- BDV64C
- BDV64BG
- BDV64BF
- BDV64B
- BDV64AF
- BDV64A
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- BDV48
- BDV47
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- BDV18
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- BDV15
- BDV14
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- BDT-SSA
- BDT-SS
- BDT96F(A)
- BDT96F
- BDT96
- BDT95F(A)
- BDT95F
- BDT95
- BDT94F(A)
- BDT94F
- BDT94
- BDT93F(A)
- BDT93F
- BDT93
- BDT92F
- BDT92
- BDT91F
- BDT91
- BDT88F
- BDT88
- BDT87F
- BDT87
- BDT86F
- BDT86
BDV64数据表相关新闻
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BD9328EFJ：降压型开关稳压器 ●简介 BD9328EFJ是一个同步降压开关稳压器，集成了2低电阻N沟道MOSFET。 较宽广的输入电压范围内达到2A的连续输出电流。 电流模式能提供快速瞬态响应和容易的相位补偿。 ●特点 1）宽输入范围4.2V〜18.0V 2）2A输出电流 3）高侧/低侧FET导通电阻;0.15/0.13Ω电源开关 4）低ESR输出陶瓷电容器 5）低待机电流在关断模式 6）380 kHz的固定经营频
2012-11-10
DdatasheetPDF页码索引
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