您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第2061页 > BDV64

BDV64晶体管资料

  • BDV64别名：BDV64三极管、BDV64晶体管、BDV64晶体三极管

  • BDV64生产厂家：德国凡尔伏公司

  • BDV64制作材料：Si-P+Darl+Di

  • BDV64性质：低频或音频放大 （LF）_功率放大 （L）

  • BDV64封装形式：直插封装

  • BDV64极限工作电压：60V

  • BDV64最大电流允许值：12A

  • BDV64最大工作频率：<1MHZ或未知

  • BDV64引脚数：3

  • BDV64最大耗散功率：125W

  • BDV64放大倍数：β>1000

  • BDV64图片代号：B-62

  • BDV64vtest：60

  • BDV64htest：999900

  • BDV64atest：12

  • BDV64wtest：125

  • BDV64代换 BDV64用什么型号代替：BDV66,BDW84A,

BDV64价格

参考价格：￥5.2161

型号：BDV64BG 品牌：ONSemi 备注：这里有BDV64多少钱，2024年最近7天走势，今日出价，今日竞价，BDV64批发/采购报价，BDV64行情走势销售排行榜，BDV64报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BDV64

POWER TRANSISTORS(12A,125W)

MOSPEC

MOSPEC

MOSPEC
BDV64

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDV65,BDV65A,BDV65BandBDV65C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
BDV64

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS •DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C •125Wat25°CCaseTemperature •12AContinuousCollectorCurrent •MinimumhFEof1000at4V,5A

TRSYS

Transys Electronics

TRSYS
BDV64

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBDV65/65A/65B/65C ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=-12A ·Collector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A ·ComplementtoTypeBDV65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BDV64

PNP SILICON DARLINGTONS POWER TRANSISTORS

PNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV65-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
BDV64

Silicon PNP Darlington Power Transistor

DESCRIPTION •CollectorCurrent-lc=-12A •Collector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max.)@lc=-5A •ComplementtoTypeBDV65/A/B/C APPLICATIONS •Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BDV64

PNP SILICON POWER DARLINGTONS

文件：110.73 Kbytes Page：4 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64

Silicon PNP Power Transistors

文件：139.15 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64

PNP SILICON POWER DARLINGTONS

文件：109.72 Kbytes Page：5 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64

封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 60V 12A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CentralCentral Semiconductor Corp

美国中央半导体

Central
BDV64A

PNP SILICON DARLINGTONS POWER TRANSISTORS

PNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV65-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
BDV64A

Silicon PNP Darlington Power Transistor

DESCRIPTION •CollectorCurrent-lc=-12A •Collector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max.)@lc=-5A •ComplementtoTypeBDV65/A/B/C APPLICATIONS •Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BDV64A

POWER TRANSISTORS(12A,125W)

MOSPEC

MOSPEC

MOSPEC
BDV64A

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDV65,BDV65A,BDV65BandBDV65C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
BDV64A

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS •DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C •125Wat25°CCaseTemperature •12AContinuousCollectorCurrent •MinimumhFEof1000at4V,5A

TRSYS

Transys Electronics

TRSYS
BDV64A

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBDV65/65A/65B/65C ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64A

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=-12A ·Collector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A ·ComplementtoTypeBDV65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BDV64B

POWER TRANSISTORS(12A,125W)

MOSPEC

MOSPEC

MOSPEC
BDV64B

DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

ComplementarySiliconPlasticPowerDarlingtons ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−HFE=1000(min)@5Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistors •ThesearePb−FreeDevices*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BDV64B

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDV65,BDV65A,BDV65BandBDV65C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
BDV64B

Complementary Silicon Plastic Power Darlingtons

ComplementarySiliconPlasticPowerDarlingtons ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain HFE=1000(min)@5Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistors

MotorolaMotorola, Inc

摩托罗拉

Motorola
BDV64B

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBDV65/65A/65B/65C ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64B

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=-12A ·Collector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A ·ComplementtoTypeBDV65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BDV64B

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS •DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C •125Wat25°CCaseTemperature •12AContinuousCollectorCurrent •MinimumhFEof1000at4V,5A

TRSYS

Transys Electronics

TRSYS
BDV64B

Silicon PNP Darlington Power Transistor

DESCRIPTION •CollectorCurrent-lc=-12A •Collector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max.)@lc=-5A •ComplementtoTypeBDV65/A/B/C APPLICATIONS •Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BDV64B

PNP SILICON DARLINGTONS POWER TRANSISTORS

PNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV65-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
BDV64C

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDV65,BDV65A,BDV65BandBDV65C ●125Wat25°CCaseTemperature ●12AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
BDV64C

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS •DesignedforComplementaryUsewithBDV64,BDV64A,BDV64BandBDV64C •125Wat25°CCaseTemperature •12AContinuousCollectorCurrent •MinimumhFEof1000at4V,5A

TRSYS

Transys Electronics

TRSYS
BDV64C

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBDV65/65A/65B/65C ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Foruseingeneralpurposeamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64C

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·CollectorCurrent-IC=-12A ·Collector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A ·ComplementtoTypeBDV65/A/B/C APPLICATIONS ·Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BDV64C

PNP SILICON DARLINGTONS POWER TRANSISTORS

PNPSILICONDARLINGTONSPOWERTRANSISTORS TheyaresiliconepitaxialbasetransistorsmountedinTO-3PN. Theyaredesignedforaudiooutputstagesandgeneralamplifierandswitchingapplications. complementaryisBDV65-A-B-C CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
BDV64C

Silicon PNP Darlington Power Transistor

DESCRIPTION •CollectorCurrent-lc=-12A •Collector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max.)@lc=-5A •ComplementtoTypeBDV65/A/B/C APPLICATIONS •Designedforaudiooutputstagesandgeneralamplifierandswitchingapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BDV64A

PNP SILICON POWER DARLINGTONS

文件：110.73 Kbytes Page：4 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64A

Silicon PNP Power Transistors

文件：139.15 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64A

PNP SILICON POWER DARLINGTONS

文件：109.72 Kbytes Page：5 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64A-S

封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP DARL 60V 12A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64B

Silicon PNP Power Transistors

文件：139.15 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64B

PNP SILICON POWER DARLINGTONS

文件：110.73 Kbytes Page：4 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64B

Complementary Silicon Plastic Power Darlingtons

文件：118.12 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BDV64B

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BDV64B

PNP SILICON POWER DARLINGTONS

文件：109.72 Kbytes Page：5 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64B

Complementary Silicon Plastic Power Darlingtons

文件：112.12 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BDV64B

Complementary Silicon Plastic Power Darlingtons

文件：116.09 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BDV64BG

Complementary Silicon Plastic Power Darlingtons

文件：112.12 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BDV64BG

Complementary Silicon Plastic Power Darlingtons

文件：118.12 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BDV64C

Silicon PNP Power Transistors

文件：139.15 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BDV64C

PNP SILICON POWER DARLINGTONS

文件：110.73 Kbytes Page：4 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64C

PNP SILICON POWER DARLINGTONS

文件：109.72 Kbytes Page：5 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns
BDV64-S

PNP SILICON POWER DARLINGTONS

文件：110.73 Kbytes Page：4 Pages

BournsBourns Inc.

伯恩斯（邦士）

Bourns

BDV64产品属性

  • 类型

    描述

  • 型号

    BDV64

  • 功能描述

    达林顿晶体管 125W 12A PNP

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

BDV64供应商更多...

更新时间：2024-4-25 9:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市赛尔通科技有限公司
BDV64BG
ONS
23+
360
询价
深圳市纳立科技有限公司
BDV64BG
三年内
1983
纳立只做原装正品13590203865
询价
深圳市博浩通科技有限公司
BDV64
ST
23+
TO-247
3000
全新原装
询价
深圳市深创辉科技有限公司
BDV64A
POWERINNOV
10
原装正品现货供应
询价
深圳市振鑫微电子科技有限公司
BDV64A
POWERINNOV
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
深圳市诺美思科技有限公司
BDV64BG
PTIF
22+/23+
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市智连鑫科技有限公司
BDV64BG
ON(安森美)
2021/2022+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
标准国际(香港)有限公司
BDV64A
BDV64A
500
500
询价
深圳廊盛科技有限公司
BDV64A功率三极管
SEC
23+
TO3P
20000
原装正品 欢迎咨询
询价
深圳市星佑电子有限公司
BDV64B
ST
22+
TO-3P
16900
支持样品 原装现货 提供技术支持!
询价

BDV64芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

BDV64规格书下载地址

BDV64参数引脚图相关

BDV64数据表相关新闻

  • BD9F500QUZ-E2

    进口代理

    2024-4-18

  • BE-A301

    BE-A301

    2022-3-15

  • BF7612CM28，40k现货，批次21+

    BF7612CM28，40k现货，批次21+

    2021-11-18

  • BF7612CM28，BYD，40K，21+

    BF7612CM28，BYD，40K，21+

    2021-11-10

  • BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2

    ROHMSemiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC/DC转换器

    2020-6-9

  • BD9328EFJ-降压型开关稳压器

    BD9328EFJ：降压型开关稳压器●简介BD9328EFJ是一个同步降压开关稳压器，集成了2低电阻N沟道MOSFET。较宽广的输入电压范围内达到2A的连续输出电流。电流模式能提供快速瞬态响应和容易的相位补偿。●特点1）宽输入范围4.2V〜18.0V2）2A输出电流3）高侧/低侧FET导通电阻;0.15/0.13Ω电源开关4）低ESR输出陶瓷电容器5）低待机电流在关断模式6）380kHz的固定经营频

    2012-11-10

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示