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BD941F

SILICON EPITAXIAL BASE POWER TRANSISTORS

文件:289.7 Kbytes Page:6 Pages

PHILIPS

飞利浦

BD941F

isc Silicon NPN Power Transistor

文件:112.62 Kbytes Page:2 Pages

ISC

无锡固电

BD941F

Silicon NPN Power Transistor

文件:131.67 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD941F

Silicon NPN Power Transistors

文件:204.56 Kbytes Page:3 Pages

SAVANTIC

BD941F

Silicon NPN Power Transistors

文件:206.14 Kbytes Page:3 Pages

SAVANTIC

BD941F

Trans GP BJT NPN 120V 3A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

LOW VOLTAGE 1:27 CLOCK DISTRIBUTION CHIP

Low Voltage 1:27 Clock Distribution Chip The MPC941 is a 1:27 low voltage clock distribution chip. The device features the capability to select either a differential LVPECL or an LVTTL/LVCMOS compatible input. The 27 outputs are LVCMOS or LVTTL compatible and feature the drive strength to drive 5

MOTOROLA

摩托罗拉

Integrated Circuit Operational Amplifier

Description: The NTE941M and NTE941SM (Surface Mount) are general purpose operational amplifiers in 8–Lead DIP type packages and offer many features which make their application nearly foolproof: overload protection on the input and output, no latch–up when the common mode range is exceed

NTE

Integrated Circuit Operational Amplifier

Description: The NTE941D is a general purpose operational amplifier in a 14–Lead DIP type package and offers many features which make its application nearly foolproof: overload protection on the input and output, no latch–up when the common mode range is exceeded, as well as freedom from oscill

NTE

Integrated Circuit Operational Amplifier

Description: The NTE941M and NTE941SM (Surface Mount) are general purpose operational amplifiers in 8–Lead DIP type packages and offer many features which make their application nearly foolproof: overload protection on the input and output, no latch–up when the common mode range is exceed

NTE

Integrated Circuit Operational Amplifier

文件:23.16 Kbytes Page:3 Pages

NTE

BD941F产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    140V

  • Maximum Collector Emitter Saturation Voltage:

    0.6@0.1A@1AV

  • Maximum Collector Emitter Voltage:

    120V

  • Maximum DC Collector Current:

    3A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150ᄀC

  • Maximum Power Dissipation:

    19000mW

  • Maximum Transition Frequency:

    3(Min)MHz

  • Type:

    NPN

更新时间:2026-7-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2026+
TO-220F
117
原装正品 假一罚十!
ST
26+
TO-220F
60000
只有原装 可配单
ST
25+
TO-220F
20000
原装,请咨询
ST
1012
TO-220F
105
全新 发货1-2天
24+
TO-220FA
10000
全新
恩XP
23+
TO-220F
11846
一级代理商现货批发,原装正品,假一罚十
ST
25+
TO-220F
20000
原装
ST/意法
08+P
QFN
3200
全新、原装
ST
2511
TO-220F
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货

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