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BD937F

SILICON EPITAXIAL BASE POWER TRANSISTORS

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PHILIPS

飞利浦

BD937F

isc Silicon NPN Power Transistor

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ISC

无锡固电

BD937F

Silicon NPN Power Transistor

文件:131.67 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD937F

Trans GP BJT NPN 80V 3A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

9.0 VOLT NOMINAL ZENER VOLTAGE 5

• MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 9.0 VOLT NOMINAL ZENER VOLTAGE + 5 • ELECTRICALLY SIMILAR TO 1N935 THRU 1N937A • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLO

CDI-DIODE

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• 1N935BUR-1, 1N937BUR-1 and 1N938BUR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/156 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 9.0 VOLT NOMINAL ZENER VOLTAGE • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

CDI-DIODE

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• 1N935BUR-1, 1N937BUR-1 and 1N938BUR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/156 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 9.0 VOLT NOMINAL ZENER VOLTAGE • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

CDI-DIODE

Integrated Circuit JFET Input Operational Amplifier

Description: The NTE937 is a monolithic JFET input operational amplifier in an 8–Lead Metal Can type package incorporating well–matched, high voltage JFET’s on the same chip with standard bi–polar transistors. This amplifier features low input bias and offset currents, low offset voltage and offs

NTE

Integrated Circuit JFET Input Operational Amplifier

Description: The NTE937M is a monolithic JFET input operational amplifier in an 8–Lead DIP type package incorporating well–matched, high voltage JFET’s on the same chip with standard bi–polar transistors. This amplifier features low input bias and offset currents, low offset voltage and offset vo

NTE

BD937F产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    100V

  • Maximum Collector Emitter Saturation Voltage:

    0.6@0.1A@1AV

  • Maximum Collector Emitter Voltage:

    80V

  • Maximum DC Collector Current:

    3A

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Operating Temperature:

    150ᄀC

  • Maximum Power Dissipation:

    19000mW

  • Maximum Transition Frequency:

    3(Min)MHz

  • Type:

    NPN

更新时间:2026-8-3 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEXPERIA/安世
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
恩XP
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
24+
TO-220FA
10000
全新
恩XP
23+
TO-220F
11846
一级代理商现货批发,原装正品,假一罚十
恩XP
22+
TO-220F
6000
十年配单,只做原装
恩XP
22+
TO-220F
91239

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