NPN Silicon Darlington Transistors

Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting

NPN Silicon Darlington Transistors

isc Silicon NPN Power Transistor

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34 MHz, CBFET Fast Settling Op Amp

PRODUCT DESCRIPTION The AD843 is a fast settling, 34 MHz, CBFET input op amp. The AD843 combines the low (0.6 nA) input bias currents characteristic of a FET input amplifier while still providing a 34 MHz bandwidth and a 135 ns settling time (to within 0.01 of final value for a 10 volt step). The

34 MHz, CBFET Fast Settling Op Amp

PRODUCT DESCRIPTION The AD843 is a fast settling, 34 MHz, CBFET input op amp. The AD843 combines the low (0.6 nA) input bias currents characteristic of a FET input amplifier while still providing a 34 MHz bandwidth and a 135 ns settling time (to within 0.01 of final value for a 10 volt step). The

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

Integrated Circuit TV Video IF Phase Locked Loop (PLL) Synchronous Detector

Description: The NTE843 is a linear IC synchronous detector employing a phase–locked oscillator to demodulate the 45.75MHz video IF signals in color–TV receivers. The NTE843 features AFT voltage for DC control of the tuner; an adjustment for the zero–carrier DC level at the video output terminal;

NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5603, 2SC5600) • Low voltage operation Q1: Built-in high gain transistor fT = 13.5 GHz, |S21e|2 = 10.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz Q2: Built-in low phase distortion t