TFT-LCD Bias Boost Converter

Description BD8152FVM,BD8158FVM are the 1-channel step-up switching regulator which builds in the low voltage FET. Input voltage is 2.5 V to 5.5 V (BD8152FVM), 2.1V to 5.5V(BD8158FVM) realizing the low consumption power. High accuracy feedback voltage r1 is established and the brightness dispersi

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

Description BD8152FVM,BD8158FVM are the 1-channel step-up switching regulator which builds in the low voltage FET. Input voltage is 2.5 V to 5.5 V (BD8152FVM), 2.1V to 5.5V(BD8158FVM) realizing the low consumption power. High accuracy feedback voltage r1 is established and the brightness dispersi

2.5-5.5V 1ch Boost converter

BD8152FVM是内置低电压FET的1ch升压开关稳压器。输入电压2.5V to 5.5V、实现低功耗。高反馈電圧精度±1%、抑制输出电压不均。 •PWM系统电源模式\n•输入电压范围2.5V to 5.5V\n•输入频率600kHz/1,200kHz\n•内置0.25Ω电源开关\n•反馈电压精度1.245±1%\n•内置UVLO电路\n•内置过电流保护\n•内置热击穿保护电路;

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

文件：443.78 Kbytes Page：18 Pages

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

文件：444.8 Kbytes Page：18 Pages

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

文件：443.78 Kbytes Page：18 Pages

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

文件：444.8 Kbytes Page：18 Pages

Boost Converter with Integrated FET

文件：1.45136 Mbytes Page：27 Pages

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

文件：444.8 Kbytes Page：18 Pages

丝印代码：D8152；Boost Converter with Integrated FET

文件：1.45136 Mbytes Page：27 Pages

MICROWAVE NOISE TUBES & NOISE SOURCES

DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in a microwave RF system that allows accurate measurements of the noise figure of the receiver or its components. The requirements of a device used for ma

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

10 GBPS TRANSCEIVER WITH 10G CLOCK, BUS SKEW, AND LIMITING AMPLIFIER

文件：129.43 Kbytes Page：1 Pages