POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features • Low Collector−Emitter Sustaining Voltage − VCEO(sus)60 Vdc (Min) • High Current−Gain − Bandwidth Product fT=

Complementary Plastic Silicon Power Transistors

BD787 -> NPN BD788 -> PNP 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS . . . designedfor lower power audio amplifier and lowcurrent, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage VCEO(sus)60 Vdc (Min) — BD787, BD78

isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40~250(Min)@ IC= 0.2A • Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) • Complement to type BD788 APPLICATIONS • Designed for low power audio amplifier and low current, high-speed switching applications.

COMPLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS

COMPLEMENTARY PLASTIC SILICON ANNULAR* POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 45, 6O VOLTS 15 WATTS

4.0 A，60 V，NPN 双极功率晶体管

The 4 A, 60 V PNP Bipolar Power Transistor is designed for lower power audio amplifier and low current, high speed switching applications. The BD787 and BD788 are complementary devices. • Low Collector-Emitter Sustaining VoltageVCEO(sus) 60 Vdc (Min)BD787, BD788\n• Collector-Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc\n• Pb-Free Packages are Available\n;

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Plastic Silicon Power Transistors

文件：78.93 Kbytes Page：6 Pages

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features • Low Collector−Emitter Sustaining Voltage − VCEO(sus)60 Vdc (Min) • High Current−Gain − Bandwidth Product fT=

Complementary Plastic Silicon Power Transistors

文件：78.93 Kbytes Page：6 Pages

Complementary Plastic Silicon Power Transistors

文件：78.93 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CATV amplifier module

DESCRIPTION Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC) in a SOT115J package. The module consists of two cascaded stages both in cascode configuration. FEATURES • Excellent linearity • Extremely low noise • High gain • Excellent return loss propertie

5V/3.3V/3V 5A Step-Down, PWM, Switch-Mode DC-DC Regulators

General Description The MAX787/MAX788/MAX789 are monolithic, bipolar, pulse-width modulation (PWM), switch-mode, step-down DC-DC regulators. Each is rated at 5A. Very few external components are needed for standard operation because the power switch, oscillator, feedback, and control circuitry ar

Integrated Circuit AM Receiver Subsystem

Description: The NTE787, a monolithic integrated circuit, is an AM subsystem that provides the converter, IF amplifier, detector, and audio preamplifier stages for an AM receiver. It also provides internal AGC for the first IF amplifier stage, delayed AGC for an optional external RF amplifier, a